Ashley P. Saunders

Tungsten diselenide (WSe ₂ ) is a promising p -type semiconductor limited by high contact resistance ( R _C ) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe ₂ to chloroform provides simple and stable p -type doping. In monolayer WSe ₂ transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces R _C to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10 ¹⁰ at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic R _C of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe ₂ , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe ₂ interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe ₂ transistors with good p -type performance.

Transition metal dichalcogenides possess valley pseudospin, enabling coupling between photon spin and electron spin for classical and quantum information processing. However, rapid valley-dephasing processes have impeded the development of scalable, high-performance valleytronic devices operating at room temperature. Here we demonstrate that a chiral resonant metasurface can enable room-temperature valley-selective emission in MoSe₂ monolayers independent of excitation polarization. This platform provides circular eigen-polarization states with a high quality factor (Q-factor) and strong chiral near-field enhancement. The fabricated Si chiral metasurfaces exhibit chiroptical resonances with Q-factors up to 450 at visible wavelengths. We reveal degrees of circular polarization (DOP) reaching a record high of 0.5 at room temperature. Our measurements show that the high DOP can be attributed to the significantly increased chiroptical local density of states, which enhances valley-specific radiative transition rates by a factor of ~13. Our work could facilitate the development of ultracompact chiral classical and quantum light sources.

Moiré superlattices, engineered through precise stacking of van der Waals (vdW) layers, hold immense promise for exploring strongly correlated and topological phenomena. However, these applications have been held back by the common preparation method: tear-and-stack of Scotch tape exfoliated monolayers, which suffer from low efficiency and reproducibility, twist angle inhomogeneity, interfacial contamination, and micrometer sizes. Here, we report an effective strategy to construct highly consistent mixed-dimensional and twisted bilayer vdW moiré structures with high production throughput, near-unity yield, pristine interfaces, precisely controlled twist angles, and macroscopic scale (up to centimeters) with enhanced thermal stability. We demonstrate the versatility across various vdW materials, including transition metal dichalcogenides, graphene, and hBN. The expansive size and high quality of moiré structures enable reciprocal-space high-resolution mapping of the superlattices and back-folded moiré mini band structures with low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). In particular, we identify the backfolded bands at the K point of twisted transition metal dichalcogenide moiré structures. This technique will have broad applications in both fundamental studies and the mass production of twistronic devices.

Monolayer 2D semiconductors, such as WS₂, exhibit uniquely strong light-matter interactions due to exciton resonances that enable atomically thin optical elements. Similar to geometry-dependent plasmon and Mie resonances, these intrinsic material resonances offer coherent and tunable light scattering. Thus far, the impact of the excitons' temporal dynamics on the performance of such excitonic metasurfaces remains unexplored. Here, we show how the excitonic decay rates dictate the focusing efficiency of an atomically thin lens carved directly out of exfoliated monolayer WS₂. By isolating the coherent exciton radiation from the incoherent background in the focus of the lens, we obtain a direct measure of the role of exciton radiation in wavefront shaping. Furthermore, we investigate the influence of exciton-phonon scattering by characterizing the focusing efficiency as a function of temperature, demonstrating an increased optical efficiency at cryogenic temperatures. Our results provide valuable insights into the role of excitonic light scattering in 2D nanophotonic devices.

Vertically stacked van der Waals (vdW) heterostructures exhibit unique electronic, optical, and thermal properties that can be manipulated by twist-angle engineering. However, the weak phononic coupling at a bilayer interface imposes a fundamental thermal bottleneck for future two-dimensional devices. Using ultrafast electron diffraction, we directly investigated photoinduced nonequilibrium phonon dynamics in MoS ₂ /WS ₂ at 4° twist angle and WSe ₂ /MoSe ₂ heterobilayers with twist angles of 7°, 16°, and 25°. We identified an interlayer heat transfer channel with a characteristic timescale of ~20 picoseconds, about one order of magnitude faster than molecular dynamics simulations assuming initial intralayer thermalization. Atomistic calculations involving phonon-phonon scattering suggest that this process originates from the nonthermal phonon population following the initial interlayer charge transfer and scattering. Our findings present an avenue for thermal management in vdW heterostructures by tailoring nonequilibrium phonon populations.