Katarzyna Skibińska
Research Subjects
Katarzyna Skibińska has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Grzegorz Sapeta
CBRTP SA Research and Development Center of Technology for Industry, Zygmunta Modzelewskiego 77 St., 02-679 Warszawa, Poland
1 shared publication - Jakub Gwizdak
Faculty of Non-Ferrous Metals, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland
1 shared publication - Marek Wojnicki
Faculty of Non-Ferrous Metals, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland
1 shared publication - Marianna Marciszko
Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Krakow, Poland
1 shared publication - Piotr Żabiński
Faculty of Non-Ferrous Metals, AGH University of Krakow, 30-059 Krakow, Poland
1 shared publication - Rafał Knura
CBRTP SA Research and Development Center of Technology for Industry, Ludwika Waryńskiego 3A, 00-645 Warszawa, Poland
1 shared publication
Latest Publications
- Open Access
- 30 January 2024
- Published by MDPI AG in Electronics
- Vol. 13 (3) , 554
Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures
The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.
- 30 January 2024
- Published by MDPI AG in Electronics
- Vol. 13 (3) , 554
Open AccessEvaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures
The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.