K. Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
K. Wang has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
B. Cao
School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications 1 , Haidian, Beijing 100876, People's Republic of China
1 shared publicationL. Rao
School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications 1 , Haidian, Beijing 100876, People's Republic of China
1 shared publication- M. Xu
School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications 1 , Haidian, Beijing 100876, People's Republic of China
1 shared publication Q. Shi
School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications 1 , Haidian, Beijing 100876, People's Republic of China
1 shared publicationX. Xin
School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing University of Posts and Telecommunications 1 , Haidian, Beijing 100876, People's Republic of China
1 shared publication- Xiaoying He
Beijing University of Posts and Telecommunications
1 shared publication
Latest Publications
- Open Access
- 29 January 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (5)
Long-ionic-gated graphene synaptic transistor with enhanced memory, learning function and humidity perception
With the development of neuromorphic electronics, much effort has been devoted to expand perception, memory, and computing integration capabilities. In this paper, an ionic-based graphene synaptic transistor with long-gate structure has been investigated to mimic memory, learning function and perceive humidity. By harnessing the tunable in-plane-field transport of charge carriers in graphene and ions motion in ion-gel, this transistor mimics various synaptic functionalities, including inhibitory postsynaptic current, excitatory postsynaptic current, paired-pulse facilitation, long-term depression, and long-term potentiation. Under short pules stimuli, the long-gate structure provides our transistor with an inertial assisted re-accumulation, generating two excitatory postsynaptic current peaks and enhanced paired-pule facilitation up to ∼265%. Furthermore, the presence of the long-gate structure enables our transistor to exhibit excellent learning and simulate Ebbinghaus' memory. In addition, physical mechanic about its humidity perception has been analyzed and discussed. This study provides a unique platform for designing high-performance carbon-based artificial synapses enabling integrated functions of sensing, storage, and computation for the neuromorphic system.
- 29 January 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (5)
Open AccessLong-ionic-gated graphene synaptic transistor with enhanced memory, learning function and humidity perception
With the development of neuromorphic electronics, much effort has been devoted to expand perception, memory, and computing integration capabilities. In this paper, an ionic-based graphene synaptic transistor with long-gate structure has been investigated to mimic memory, learning function and perceive humidity. By harnessing the tunable in-plane-field transport of charge carriers in graphene and ions motion in ion-gel, this transistor mimics various synaptic functionalities, including inhibitory postsynaptic current, excitatory postsynaptic current, paired-pulse facilitation, long-term depression, and long-term potentiation. Under short pules stimuli, the long-gate structure provides our transistor with an inertial assisted re-accumulation, generating two excitatory postsynaptic current peaks and enhanced paired-pule facilitation up to ∼265%. Furthermore, the presence of the long-gate structure enables our transistor to exhibit excellent learning and simulate Ebbinghaus' memory. In addition, physical mechanic about its humidity perception has been analyzed and discussed. This study provides a unique platform for designing high-performance carbon-based artificial synapses enabling integrated functions of sensing, storage, and computation for the neuromorphic system.