Raphael B. Fernandes de Oliveira
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Raphael B. Fernandes de Oliveira has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Caique Serati de Brito
Physics Department
1 shared publication - Camila Cavalini
Department of Physics, Federal University of São Carlos 1 , São Carlos, SP 13565-905, Brazil
1 shared publication - César Ricardo Rabahi
Department of Physics, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
1 shared publication - Eunji Lee
Department of Energy Science, Sungkyunkwan University 2 , Suwon 16419, Republic of Korea
1 shared publication - Felipe F. Cazetta
Department of Physics, Federal University of São Carlos 1 , São Carlos, SP 13565-905, Brazil
1 shared publication - Ingrid David Barcelos
Brazilian Center for Research in Energy and Materials (CNPEM)
1 shared publication
Latest Publications
- Open Access
- 1 April 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (14)
Revealing localized excitons in WSe2/β-Ga2O3
We have investigated the optical and magneto-optical properties of monolayer (ML) WSe2 on flakes of β-Ga2O3 under high magnetic fields. Remarkably, sharp emission peaks were observed and associated with localized excitons related to point defects. A detailed study of low-temperature photoluminescence (PL) and magneto-PL under high perpendicular magnetic field up to 9 T was carried out. Several sharp emission peaks have shown valley g-factors values close to −4, which is an unusual result for localized excitons in WSe2. Furthermore, some PL peaks have shown higher g-factor values of ≈−7 and ≈−12, which were associated with the hybridization of strain localized dark excitons and defects. The reported results suggest that β-Ga2O3 is, indeed, a promising dielectric substrate for ML WSe2 and also to explore fundamental physics in view of possible applications in quantum information technology.
- 1 April 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (14)
Open AccessRevealing localized excitons in WSe2/β-Ga2O3
We have investigated the optical and magneto-optical properties of monolayer (ML) WSe2 on flakes of β-Ga2O3 under high magnetic fields. Remarkably, sharp emission peaks were observed and associated with localized excitons related to point defects. A detailed study of low-temperature photoluminescence (PL) and magneto-PL under high perpendicular magnetic field up to 9 T was carried out. Several sharp emission peaks have shown valley g-factors values close to −4, which is an unusual result for localized excitons in WSe2. Furthermore, some PL peaks have shown higher g-factor values of ≈−7 and ≈−12, which were associated with the hybridization of strain localized dark excitons and defects. The reported results suggest that β-Ga2O3 is, indeed, a promising dielectric substrate for ML WSe2 and also to explore fundamental physics in view of possible applications in quantum information technology.