Adam Williams
Research Subjects
Adam Williams has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Ahmad Shuhaimi
University of Malaya
1 shared publication - Marwan Mansor
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia
1 shared publication - Mohd Rofei Mat Hussin
MIMOS Berhad, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia
1 shared publication - Muhammad Iznul Hisyam
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia
1 shared publication - Rizuan Norhaniza
Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia
1 shared publication
Latest Publications
- Open Access
Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition
A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.
Open AccessStudy of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition
A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.