Guannan Tang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Guannan Tang has a total of 10 co-authors. Here are the top co-authors by number of shared publications:
- Fang Peng
School of Aviation Engineering, Air Force Engineering University, Xi’an 710051, China
1 shared publication - Hongwei Wang
Department of Computer Science Department of Computer Science Department of Computer Science Department of Computer Science Purdue University Stanford University Stanford University Stanford University
1 shared publication - Shaowei Sun
LONGi Green Energy Technology Co., Ltd., Xi’an 710018, China
1 shared publication - Siyi Cheng
Air Force Engineering University, Xi’an 710043, China
1 shared publication - Xiaohong Zhao
School of Aviation Engineering, Air Force Engineering University, Xi’an 710051, China
1 shared publication - Xing Wang
Aviation Engineering School, Air Force Engineering University, 1 Baling Road, Xi’an 710038, China
1 shared publication
Latest Publications
- Open Access
- 9 May 2024
- Published by MDPI AG in Electronics
- Vol. 13 (10) , 1831
Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation
The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.
- 9 May 2024
- Published by MDPI AG in Electronics
- Vol. 13 (10) , 1831
Open AccessModel Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation
The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.