Mengyang Zhong
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Mengyang Zhong has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Daibing Zhou
Institute of Semiconductors, Chinese Academy of Sciences
2 shared publications - Dan Lu
Institute of Semiconductors
2 shared publications - Fei Guo
State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 shared publications - Song Liang
Institute of Semiconductors, Chinese Academy of Sciences
2 shared publications Guangfeng Yao
Wuhan Photon Link Semiconductor Company Ltd
1 shared publicationHuan Li
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
1 shared publication
Latest Publications
- 1 December 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 38 (23) , 1909-1912
High-Efficiency High-Power 1.3 μ m InGaAlAs/InP MQW Ridge Waveguide DFB Laser
- 1 December 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 38 (23) , 1909-1912
High-Efficiency High-Power 1.3 μ m InGaAlAs/InP MQW Ridge Waveguide DFB Laser
- Open Access
An Ultra-Compact InP 1310/1550 nm Wavelength Division (De)multiplexer Based on Channel-Shaped MMI Coupler
An ultra-compact 1310/1550 nm wavelength division (de)multiplexer based on a channel-shaped multimode interference structure was proposed and fabricated on an InP platform. The device has been simulated and optimized with a low insertion loss of 0.1 dB at 1310 nm wavelength and 0.33 dB at 1550 nm wavelength. The device features a notably compact footprint with an MMI region just 48 μm in length. Measurements revealed extinction ratios of 7.1 dB at 1310 nm and 5.9 dB at 1550 nm, accompanied by insertion losses of 7.07 dB and 3.03 dB for these wavelengths.
Open AccessAn Ultra-Compact InP 1310/1550 nm Wavelength Division (De)multiplexer Based on Channel-Shaped MMI Coupler
An ultra-compact 1310/1550 nm wavelength division (de)multiplexer based on a channel-shaped multimode interference structure was proposed and fabricated on an InP platform. The device has been simulated and optimized with a low insertion loss of 0.1 dB at 1310 nm wavelength and 0.33 dB at 1550 nm wavelength. The device features a notably compact footprint with an MMI region just 48 μm in length. Measurements revealed extinction ratios of 7.1 dB at 1310 nm and 5.9 dB at 1550 nm, accompanied by insertion losses of 7.07 dB and 3.03 dB for these wavelengths.
- Open Access
- 28 May 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Journal
- Vol. 16 (5) , 1-5
EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs
We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25 ℃, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems.
- 28 May 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Journal
- Vol. 16 (5) , 1-5
Open AccessEAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs
We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25 ℃, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems.