Jaekyun Kim
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Jaekyun Kim has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Chang Jun Park
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
1 shared publication Dong-Su Ko
Analytic Science Group Group, CAS center, Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712, South Korea
1 shared publicationEunha Lee
Analytic Science Group Group, CAS center, Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712, South Korea
1 shared publication- Gyeongmin Yi
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
1 shared publication - Jun-Youn Kim
Advanced Development Team LED Business Samsung Electronics Yongin-si Gyeonggi-do 446-811 South Korea
1 shared publication Jung-Yeon Won
Analytic Science Group Group, CAS center, Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712, South Korea
1 shared publication
Latest Publications
- Open Access
Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility) and low-operation-voltage (x film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.
Open AccessLow-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA) self-assembled monolayer (SAM) treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility) and low-operation-voltage (x film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.
- 10 April 2014
- Published by Optica Publishing Group in Optics Express
- Vol. 22 (S3) , A857-A866
Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells
We discuss the influence of V-pits and their energy barrier, originating from its facets of () planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).- 10 April 2014
- Published by Optica Publishing Group in Optics Express
- Vol. 22 (S3) , A857-A866
Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells
We discuss the influence of V-pits and their energy barrier, originating from its facets of () planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).