SHSen-Hui Huang

Sen-Hui Huang

*This is an algorithmically generated author record based on publicly available information.

Sen-Hui Huang has a total of 6 co-authors. Here are the top co-authors by number of shared publications:

  • Chia-Seng Chang

    Institute of Physics, Academia Sinica Nankang 11529, Taipei

    1 shared publication
  • Fan-Gang Tseng

    Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

    1 shared publication
  • Fu-Rong Chen

    Department of Engineering and System Science, Center for Electron Microscopy, National Tsing-Hua University HsinChu 30043 2 Institute of Physics, Academia Sinica Nankang 11529, Taipei 4 National Synchrotron Radiation Research Center HsinChu 30076, Taiwan, Republic of China

    1 shared publication
  • Ji-Jung Kai

    Department of Mechanical Engineering, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China

    1 shared publication
  • Wan-Jhih Wang

    Department of Engineering and System Science, Center for Electron Microscopy, National Tsing-Hua University HsinChu 30043

    1 shared publication
  • Yeu-Kuang Hwu

    Institute of Physics, Academia Sinica Nankang 11529, Taipei

    1 shared publication

Latest Publications

  • The fabrication and application of Zernike electrostatic phase plate

    by Sen-Hui Huang, Wan-Jhih Wang, Chia-Seng Chang, Yeu-Kuang Hwu, Fan-Gang Tseng, Ji-Jung Kai, Fu-Rong Chen

    The Zernike electrostatic phase plate (ZEPP) consisting of three ring electrodes and two insulating rings has been fabricated using Micro Electro-Mechanical System processes. The electrostatic field produced in the phase plate was measured by electrostatic force microscopy. The electrostatic field and focal length of the phase plate is calculated using electron optics principles. The comparison of the experimental electrostatic field and the theoretical calculated is discussed. Finally, we report the application of ZEPP to enhance contrast of the SiONx/SiO2 interface in an NMOS semiconductor device. The quantitative analysis of the contrast enhancement versus the applied bias is discussed in detail.