Hongyi He
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Hongyi He has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Luke Zhao
School of Science, Xi’an University of Architecture and Technology, Xi’an, China
1 shared publication - Miaomiao Li
College of Petrochemical Engineering, Lanzhou University of Technology, Lanzhou 730050, China
1 shared publication - Minjie Zhang
School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, China
1 shared publication - Wenjun Wang
School of Science, Lanzhou University of Technology, Lanzhou, China
1 shared publication - Xudong Li
School of Management, Xi’an Jiaotong University, Xi’an 710049, China
1 shared publication - Yongjie Zhang
Institute of Modern Physics of Chinese Academy of Science, Lanzhou, China
1 shared publication
Latest Publications
- Open Access
- 25 July 2024
- Published by MDPI AG in Applied Sciences
- Vol. 14 (15) , 6509
Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis
Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by the variational principle and the Mindlin plate theory, a two-dimensional (2D) higher-order theory and equations for thin-film devices are established for a rectangular coordinate system, in which Newton’s law (i.e., stress equation of motion), Gauss’s law (i.e., charge equation of electrostatics), Continuity equations (i.e., conservation of charge for holes and electrons), drift–diffusion theory for currents in semiconductors, and unavoidable thermo-deformation-polarization-carrier coupling response in external stimulus field environment are all considered. As a typical application of these equations, the static characteristic analysis of electromechanical fields for the extensional deformation of a PS thin-film device with thermal field excitations is carried out by utilizing established zeroth-order equations and the double trigonometric series solution method. It is revealed that the extensional deformations, electric potential, electron and hole concentration perturbations, and their current densities can be controlled actively via artificially tuning thermal fields of external stimuli. Especially, a higher temperature rise can induce a deeper potential well and a higher potential barrier, which can play a vital role in driving effectively motions and redistributions of electrons and holes. Overall, the derived 2D equations as well as the quantitative results provide us some useful guidelines for investigating the thermal regulation behavior of PS thin-film devices.
- 25 July 2024
- Published by MDPI AG in Applied Sciences
- Vol. 14 (15) , 6509
Open AccessTwo-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis
Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by the variational principle and the Mindlin plate theory, a two-dimensional (2D) higher-order theory and equations for thin-film devices are established for a rectangular coordinate system, in which Newton’s law (i.e., stress equation of motion), Gauss’s law (i.e., charge equation of electrostatics), Continuity equations (i.e., conservation of charge for holes and electrons), drift–diffusion theory for currents in semiconductors, and unavoidable thermo-deformation-polarization-carrier coupling response in external stimulus field environment are all considered. As a typical application of these equations, the static characteristic analysis of electromechanical fields for the extensional deformation of a PS thin-film device with thermal field excitations is carried out by utilizing established zeroth-order equations and the double trigonometric series solution method. It is revealed that the extensional deformations, electric potential, electron and hole concentration perturbations, and their current densities can be controlled actively via artificially tuning thermal fields of external stimuli. Especially, a higher temperature rise can induce a deeper potential well and a higher potential barrier, which can play a vital role in driving effectively motions and redistributions of electrons and holes. Overall, the derived 2D equations as well as the quantitative results provide us some useful guidelines for investigating the thermal regulation behavior of PS thin-film devices.
- 3 June 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Applied Superconductivity
- Vol. 34 (6) , 1-6
Experimental Study on Strain Measurement in NbTi Superconducting Coil Structures Based on Symmetrical Compensation Bridge
The strain measurement technology of resistance strain gauges has been widely used in various types of superconducting magnets. Based on electrical signal transmission, the resistance strain gauges and electrical signal lines will be affected by temperature and electromagnetic field, which will cause interference to strain measurement. Therefore, it is challenging to make high precision measurements using resistance strain gauge measurement technology. In order to improve the measurement method, the symmetrical compensation bridge is proposed to compensate the influence of temperature gradient and magnetic field noise. This method is verified in the temperature and electromagnetic changing field during cooling and excitation processes on the NbTi superconducting magnet. The results show that the symmetrical compensation bridge can further reduce the error caused by wire resistance and environmental noise strain measurement in variable temperature and strong magnetic field environment. The proposed compensation bridge can enrich the strain measurement method in extreme environment, and provide an important strain detection method for the testing and operation of superconducting magnet structures.
- 3 June 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Applied Superconductivity
- Vol. 34 (6) , 1-6
Experimental Study on Strain Measurement in NbTi Superconducting Coil Structures Based on Symmetrical Compensation Bridge
The strain measurement technology of resistance strain gauges has been widely used in various types of superconducting magnets. Based on electrical signal transmission, the resistance strain gauges and electrical signal lines will be affected by temperature and electromagnetic field, which will cause interference to strain measurement. Therefore, it is challenging to make high precision measurements using resistance strain gauge measurement technology. In order to improve the measurement method, the symmetrical compensation bridge is proposed to compensate the influence of temperature gradient and magnetic field noise. This method is verified in the temperature and electromagnetic changing field during cooling and excitation processes on the NbTi superconducting magnet. The results show that the symmetrical compensation bridge can further reduce the error caused by wire resistance and environmental noise strain measurement in variable temperature and strong magnetic field environment. The proposed compensation bridge can enrich the strain measurement method in extreme environment, and provide an important strain detection method for the testing and operation of superconducting magnet structures.