Ye Tian
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Ye Tian has a total of 46 co-authors. Here are the top co-authors by number of shared publications:
- Guipeng Tie
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
10 shared publications - Wanli Zhang
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
10 shared publications - Ci Song
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
8 shared publications - Feng Shi
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
8 shared publications - Ci Song
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
7 shared publications - Feng Shi
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China
7 shared publications
Latest Publications
- 4 September 2026
- Published by Elsevier in Applied Surface Science
- Vol. 752
Sub-100 nm TTV correction of single-crystal diamond substrate and interfacial amorphization evolution
- 4 September 2026
- Published by Elsevier in Applied Surface Science
- Vol. 752
Sub-100 nm TTV correction of single-crystal diamond substrate and interfacial amorphization evolution
- Open Access
Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers
Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.
Open AccessUltra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers
Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.
- Open Access
- 30 June 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (7) , 1359
Research on Laser-Induced Damage Post-Restoration Morphology of Fused Silica and Optimization of Patterned CO2 Laser Repair Strategy
Fused silica has become the preferred optical material in the field of inertial confinement fusion (ICF) due to its excellent performance; however, these costly optical elements are vulnerable, and their manufacture is time-consuming. Therefore, the restoration of laser-induced damage for these optical elements is of great value. To restrain the post-restoration raised rim problem in the CO2 laser repair process to improve the restoration quality, the separate influences of key parameters of laser power, irradiation duration, and laser beam diameter on post-restoration pit morphology are compared in combined simulation and experimental studies. An optimized, patterned CO2 laser strategy is proposed and verified; the results indicate that, with the strategy, the rim height decreases from 2.6 μm to 1.52 μm, and maximal photo thermal absorption is decreased from 784.2 PPM to 209.43 PPM.
- 30 June 2023
- Published by MDPI AG in Micromachines
- Vol. 14 (7) , 1359
Open AccessResearch on Laser-Induced Damage Post-Restoration Morphology of Fused Silica and Optimization of Patterned CO2 Laser Repair Strategy
Fused silica has become the preferred optical material in the field of inertial confinement fusion (ICF) due to its excellent performance; however, these costly optical elements are vulnerable, and their manufacture is time-consuming. Therefore, the restoration of laser-induced damage for these optical elements is of great value. To restrain the post-restoration raised rim problem in the CO2 laser repair process to improve the restoration quality, the separate influences of key parameters of laser power, irradiation duration, and laser beam diameter on post-restoration pit morphology are compared in combined simulation and experimental studies. An optimized, patterned CO2 laser strategy is proposed and verified; the results indicate that, with the strategy, the rim height decreases from 2.6 μm to 1.52 μm, and maximal photo thermal absorption is decreased from 784.2 PPM to 209.43 PPM.
- Open Access
- 8 October 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (10) , 1690
Theoretical Modeling Method for Material Removal Characteristics of Abrasive Water Jet Polishing under Rotating Oblique Incidence
Abrasive water jet polishing (AWJP), as an ultra-precision machining technology, has unique machining advantages. However, the machining application of nozzles in vertical and inclined states is greatly limited because rotational symmetric material removal characteristics and the largest amount of central material removal cannot be obtained. At the same time, considering the many controllable and uncontrollable factors in AWJP, it is difficult to accurately model the removal characteristics obtained by machining. Based on the idea of the Preston equation and the calculation of fluid dynamics, this study first analyzed the material removal characteristics of a single abrasive particle and used FLUENT fluid simulation software to obtain the pressure and velocity distributions at different positions in the processes of nozzle rotation and tilt polishing. By analyzing the influence of the pressure and velocity distributions on material removal and the surface shear stress of the workpiece, a theoretical model of the material removal characteristics of abrasive water jet polishing under rotating oblique incidence was established. Finally, the effectiveness of the theoretical removal model was verified by comparing and analyzing experimental and theoretical results.
- 8 October 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (10) , 1690
Open AccessTheoretical Modeling Method for Material Removal Characteristics of Abrasive Water Jet Polishing under Rotating Oblique Incidence
Abrasive water jet polishing (AWJP), as an ultra-precision machining technology, has unique machining advantages. However, the machining application of nozzles in vertical and inclined states is greatly limited because rotational symmetric material removal characteristics and the largest amount of central material removal cannot be obtained. At the same time, considering the many controllable and uncontrollable factors in AWJP, it is difficult to accurately model the removal characteristics obtained by machining. Based on the idea of the Preston equation and the calculation of fluid dynamics, this study first analyzed the material removal characteristics of a single abrasive particle and used FLUENT fluid simulation software to obtain the pressure and velocity distributions at different positions in the processes of nozzle rotation and tilt polishing. By analyzing the influence of the pressure and velocity distributions on material removal and the surface shear stress of the workpiece, a theoretical model of the material removal characteristics of abrasive water jet polishing under rotating oblique incidence was established. Finally, the effectiveness of the theoretical removal model was verified by comparing and analyzing experimental and theoretical results.
- Open Access
- 22 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (8) , 1159
Figuring Method of High Convergence Ratio for Pulsed Ion Beams Based on Frequency-Domain Parameter Control
The continuous phase plate (CPP) provides excellent beam smoothing and shaping impacts in the inertial confinement fusion application. However, due to the features of its dispersion, its surface gradient is frequently too large (>2 μm/cm) to process. When machining a large gradient surface with continuous ion beam figuring (IBF), the acceleration of the machine motion axis cannot fulfill the appropriate requirements, and the machining efficiency is further influenced by the unavoidable extra removal layer. The pulsed ion beam (PIB) discretizes the ion beam by incorporating frequency-domain parameters, resulting in a pulsed beam with a controlled pulse width and frequency and avoiding the extra removal layer. This research evaluates the processing convergence ability of IBF and PIB for the large gradient surface using simulation and experiment. The findings reveal that PIB offers obvious advantages under the same beam diameter. Compared with the convergence ratio (γ = 2.02) and residuals (RMS = 184.36 nm) of IBF, the residuals (RMS = 27.48 nm) of PIB are smaller, and the convergence ratio (γ = 8.47) is higher. This work demonstrates that PIB has better residual convergence in large gradient surface processing. It is expected to realize ion beam machining with a higher convergence ratio.
- 22 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (8) , 1159
Open AccessFiguring Method of High Convergence Ratio for Pulsed Ion Beams Based on Frequency-Domain Parameter Control
The continuous phase plate (CPP) provides excellent beam smoothing and shaping impacts in the inertial confinement fusion application. However, due to the features of its dispersion, its surface gradient is frequently too large (>2 μm/cm) to process. When machining a large gradient surface with continuous ion beam figuring (IBF), the acceleration of the machine motion axis cannot fulfill the appropriate requirements, and the machining efficiency is further influenced by the unavoidable extra removal layer. The pulsed ion beam (PIB) discretizes the ion beam by incorporating frequency-domain parameters, resulting in a pulsed beam with a controlled pulse width and frequency and avoiding the extra removal layer. This research evaluates the processing convergence ability of IBF and PIB for the large gradient surface using simulation and experiment. The findings reveal that PIB offers obvious advantages under the same beam diameter. Compared with the convergence ratio (γ = 2.02) and residuals (RMS = 184.36 nm) of IBF, the residuals (RMS = 27.48 nm) of PIB are smaller, and the convergence ratio (γ = 8.47) is higher. This work demonstrates that PIB has better residual convergence in large gradient surface processing. It is expected to realize ion beam machining with a higher convergence ratio.
- Open Access
- 12 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (7) , 1097
Nonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal
Ion beam sputtering is widely utilized in the area of ultra-high precision fabrication, coating, and discovering the microworld. A pulsed ion beam (PIB) can achieve higher material removal resolution while maintaining traditional ion beam removal performance and macro removal efficiency. In this paper, a 0.01 s pulse width beam is used to sputter atom layer deposition (ALD) coated samples. The nano-scale phenomenon is observed by high-resolution TEM. The results show that when the cumulative sputtering time is less than 1.7 s, the sputtering removal of solid by ion beam is accompanied by a nonlinear effect. Furthermore, the shortest time (0.05 s) and lowest thickness (0.35 nm) necessary to remove a uniform layer of material were established. The definition of its nonlinear effect under a very small removal amount guides industrial ultra-high precision machining. It reveals that PIB not only has high removal resolution on nanoscale, but can also realize high volume removal efficiency and large processing diameter at the same time. These features make PIB promising in the manufacturing of high power/energy laser optics, lithography objective lens, MEMS, and other ultra-high precision elements.
- 12 July 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (7) , 1097
Open AccessNonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal
Ion beam sputtering is widely utilized in the area of ultra-high precision fabrication, coating, and discovering the microworld. A pulsed ion beam (PIB) can achieve higher material removal resolution while maintaining traditional ion beam removal performance and macro removal efficiency. In this paper, a 0.01 s pulse width beam is used to sputter atom layer deposition (ALD) coated samples. The nano-scale phenomenon is observed by high-resolution TEM. The results show that when the cumulative sputtering time is less than 1.7 s, the sputtering removal of solid by ion beam is accompanied by a nonlinear effect. Furthermore, the shortest time (0.05 s) and lowest thickness (0.35 nm) necessary to remove a uniform layer of material were established. The definition of its nonlinear effect under a very small removal amount guides industrial ultra-high precision machining. It reveals that PIB not only has high removal resolution on nanoscale, but can also realize high volume removal efficiency and large processing diameter at the same time. These features make PIB promising in the manufacturing of high power/energy laser optics, lithography objective lens, MEMS, and other ultra-high precision elements.
- Open Access
- 29 April 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (5) , 697
The Cause of Ribbon Fluctuation in Magnetorheological Finishing and Its Influence on Surface Mid-Spatial Frequency Error
In the high-power laser system, the mid-spatial frequency error of the surface of the high-power laser component will affect the normal operation of the high-power laser system. In order to improve the mid-spatial frequency error of the high-power laser component after magnetorheological finishing, the causes and influencing factors of the ribbon fluctuation in magnetorheological finishing are studied, and the influence of different ribbon fluctuation on the mid-spatial frequency error of the surface is studied. Firstly, the influence of different ribbon fluctuations on the mid-spatial frequency error of the machined surface is simulated by a computer. Secondly, the magnetic field in the circumferential direction of the polishing wheel, the fluctuation amount and frequency of the magnetorheological polishing ribbon are measured, and then the causes of the fluctuation of the magnetorheological polishing ribbon are analyzed. Moreover, through the principle of a single variable, the influence of process parameters on the fluctuation of magnetorheological polishing ribbon is explored. Finally, the fused silica component is scanned uniformly under the process parameters of magnetorheological polishing ribbon fluctuation of 40 μm, 80 μm, 150 μm, and 200 μm. The experimental results show that the greater the ribbon fluctuation, the greater the surface mid-spatial frequency error of the component, and the ribbon fluctuation is approximately linear with the RMS of the PSD2 in the mid-spatial frequency band on the surface of the component. Therefore, the fluctuation of the ribbon can be controlled by controlling the magnetorheological processing parameters, and the mid-spatial frequency band error on the surface of the high-power laser component can be significantly reduced by optimizing process parameters after magnetorheological finishing.
- 29 April 2022
- Published by MDPI AG in Micromachines
- Vol. 13 (5) , 697
Open AccessThe Cause of Ribbon Fluctuation in Magnetorheological Finishing and Its Influence on Surface Mid-Spatial Frequency Error
In the high-power laser system, the mid-spatial frequency error of the surface of the high-power laser component will affect the normal operation of the high-power laser system. In order to improve the mid-spatial frequency error of the high-power laser component after magnetorheological finishing, the causes and influencing factors of the ribbon fluctuation in magnetorheological finishing are studied, and the influence of different ribbon fluctuation on the mid-spatial frequency error of the surface is studied. Firstly, the influence of different ribbon fluctuations on the mid-spatial frequency error of the machined surface is simulated by a computer. Secondly, the magnetic field in the circumferential direction of the polishing wheel, the fluctuation amount and frequency of the magnetorheological polishing ribbon are measured, and then the causes of the fluctuation of the magnetorheological polishing ribbon are analyzed. Moreover, through the principle of a single variable, the influence of process parameters on the fluctuation of magnetorheological polishing ribbon is explored. Finally, the fused silica component is scanned uniformly under the process parameters of magnetorheological polishing ribbon fluctuation of 40 μm, 80 μm, 150 μm, and 200 μm. The experimental results show that the greater the ribbon fluctuation, the greater the surface mid-spatial frequency error of the component, and the ribbon fluctuation is approximately linear with the RMS of the PSD2 in the mid-spatial frequency band on the surface of the component. Therefore, the fluctuation of the ribbon can be controlled by controlling the magnetorheological processing parameters, and the mid-spatial frequency band error on the surface of the high-power laser component can be significantly reduced by optimizing process parameters after magnetorheological finishing.
- Open Access
- 1 January 2022
- Published by Cambridge University Press (CUP) in Laser and Particle Beams
- Vol. 2022
Study on Damage Characteristics of Fused Silica under Ion Beam Sputtering and AMP Technique
Fused silica is an optical material with excellent performance, and it is widely used in the fabrication of optics in various high-power laser systems. With the gradual improvement of laser systems, the quality of optics becomes crucial. Taking magnetorheological finishing (MRF), ion beam sputtering etching (IBSE), and advanced mitigation processing (AMP) as the means, this work focuses on exploring the damage characteristics evolution of fused silica under different techniques. In this work, IBSE technique was used to determinedly polish the optical surface after removing damage layer by MRF technique, and AMP technique was applied to etch the surface with a certain depth. Then, 10 J/cm2 (355 nm, 5 ns) laser was used to irradiate the optical surface, and the damage density of optics maintained at a low level, about 0.001/mm2, which proves that MRF, IBSE, and AMP techniques can effectively improve the laser damage resistance of optics.
- 1 January 2022
- Published by Cambridge University Press (CUP) in Laser and Particle Beams
- Vol. 2022
Open AccessStudy on Damage Characteristics of Fused Silica under Ion Beam Sputtering and AMP Technique
Fused silica is an optical material with excellent performance, and it is widely used in the fabrication of optics in various high-power laser systems. With the gradual improvement of laser systems, the quality of optics becomes crucial. Taking magnetorheological finishing (MRF), ion beam sputtering etching (IBSE), and advanced mitigation processing (AMP) as the means, this work focuses on exploring the damage characteristics evolution of fused silica under different techniques. In this work, IBSE technique was used to determinedly polish the optical surface after removing damage layer by MRF technique, and AMP technique was applied to etch the surface with a certain depth. Then, 10 J/cm2 (355 nm, 5 ns) laser was used to irradiate the optical surface, and the damage density of optics maintained at a low level, about 0.001/mm2, which proves that MRF, IBSE, and AMP techniques can effectively improve the laser damage resistance of optics.
- Open Access
- 8 November 2021
- Published by MDPI AG in Micromachines
- Vol. 12 (11) , 1370
Low-Energy Pulsed Ion Beam Technology with Ultra-High Material Removal Resolution and Widely Adjustable Removal Efficiency
High-precision optical component manufacturing by ion beam machining tools with ultra-high material removal resolution and dynamically adjustable removal efficiency is important in various industries. In this paper, we propose a low-energy pulsed ion beam (LPIB) technology that can obtain a single pulse with high-resolution material removal by adjusting the pulse frequency and duty cycle, and enable the dynamic adjustment of the removal efficiency. The pulse frequency is 1–100 Hz, and the duty cycle is 0–100%. For monocrystalline silicon, the pulse frequency and duty cycle are set to 100 Hz and 1%, respectively; thus, the single-shot pulse depth removal resolution of material is 6.7 × 10−4 nm, which means every 21 pulses can remove one silicon atom layer. Compared with IBF, where the removal resolution of the maximum depth is about 0.01 nm, the controllable resolution is one to two orders of magnitude higher. There is a linear relationship between the removal efficiency of the pulsed ion beam removal function and the pulse duty ratio. The material removal of a single pulse can be adjusted in real time by adjusting the pulse duty cycle and frequency. Owing to its high resolution and wide adjustable removal efficiency, LPIB has broad application prospects in the field of sub-nano-precision surface modification, quality tuning of inertial resonant devices, and so on. This technology is expected to advance surface processing and ultra-precision manufacturing.
- 8 November 2021
- Published by MDPI AG in Micromachines
- Vol. 12 (11) , 1370
Open AccessLow-Energy Pulsed Ion Beam Technology with Ultra-High Material Removal Resolution and Widely Adjustable Removal Efficiency
High-precision optical component manufacturing by ion beam machining tools with ultra-high material removal resolution and dynamically adjustable removal efficiency is important in various industries. In this paper, we propose a low-energy pulsed ion beam (LPIB) technology that can obtain a single pulse with high-resolution material removal by adjusting the pulse frequency and duty cycle, and enable the dynamic adjustment of the removal efficiency. The pulse frequency is 1–100 Hz, and the duty cycle is 0–100%. For monocrystalline silicon, the pulse frequency and duty cycle are set to 100 Hz and 1%, respectively; thus, the single-shot pulse depth removal resolution of material is 6.7 × 10−4 nm, which means every 21 pulses can remove one silicon atom layer. Compared with IBF, where the removal resolution of the maximum depth is about 0.01 nm, the controllable resolution is one to two orders of magnitude higher. There is a linear relationship between the removal efficiency of the pulsed ion beam removal function and the pulse duty ratio. The material removal of a single pulse can be adjusted in real time by adjusting the pulse duty cycle and frequency. Owing to its high resolution and wide adjustable removal efficiency, LPIB has broad application prospects in the field of sub-nano-precision surface modification, quality tuning of inertial resonant devices, and so on. This technology is expected to advance surface processing and ultra-precision manufacturing.