Fangpei Li

Piezoelectric semiconductor combines the unique properties of semiconducting characteristics and piezoelectric effect together, providing a universal methodology to modulate piezoelectric semiconductor device’s performance by simply introducing mechanical strain. To reveal the device physics beneath the piezoelectric modulation, in this work, a multiphysics COMSOL 6.0 simulation was employed to investigate the modulation of Si/GaN heterojunction PN diode characteristics via piezoelectric-induced interface polarization charges. The effects of charge polarity and density on forward recovery, reverse recovery, and irradiation responses were systematically analyzed. The results demonstrate that negative interface charges enhance carrier injection and accelerate device activation, whereas positive charges suppress overshoot and stabilize transient voltage behavior. During reverse recovery, negative charges shorten the storage delay and reduce the reverse peak current, improving the switching speed, whereas positive charges cause slower recovery. Under irradiation, the interface polarization charges modulate the photocurrent density by altering the depletion width and carrier collection efficiency; negative charges notably enhance the photocurrent in partially depleted devices. Furthermore, the influence of the polarization charges diminishes with increasing device length or doping concentration, as the built-in charge and electric field effects dominate. This study elucidates the physical mechanisms of piezoelectric charge control in Si/GaN heterojunctions and provides theoretical guidance for the design of high-speed, low-loss, and radiation-tunable power and optoelectronic devices.

The triboelectric nanogenerator (TENG), as a new energy harvesting device, can efficiently harvest mechanical energy from the environment to provide continuous power for electronic devices, which has great potential for powering intelligent distributed network. Laser processing technology, which enables structural, phase, and property control at different scales, can quickly and easily complete the surface patterning of TENG and facilitate efficient energy harvesting. In this work, we outline the working modes and principles of TENG, review the research progress of laser surface processing technology for fabricating TENG in recent years, including laser-induced graphene (LIG), laser ablation, laser carbonization, laser-induced copper, etc., and perspectives on the challenges and future directions for development of laser surface processing for performance enhancement of TENG.

This review summarizes the mechanisms, regulations, influencing factors, and application prospects of contact electrification at different interfaces.

Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device based on the ZnO/PDMS structure by utilizing the magnetron sputtering technique to deposit the ZnO film on a flexible substrate. Under UV light illumination, the device exhibits excellent synaptic plasticity, including excitatory postsynaptic current (EPSC), short-term potentiation (STP), and paired-pulse facilitation (PPF). By growing ZnO nanowires, we improved the fabrication processes and further enhanced the synaptic properties of the device, demonstrating long-term potentiation (LTP) and the transition from short-term memory (STM) to long-term memory (LTM). Additionally, the device exhibits outstanding flexibility, maintaining stable synaptic plasticity under bending conditions. This device shows broad application potential in mimicking visual systems and is expected to contribute significantly to the development of neuromorphic computing.

The intelligent sensing network is one of the key components in the construction of the Internet of Things, and the power supply technology of sensor communication nodes needs to be solved urgently. As a new field combining tribo-potential with semiconductor devices, tribotronics, based on the contact electrification (CE) effect, realizes direct interaction between the external environment and semiconductor devices by combining triboelectric nanogenerator (TENG) and field-effect transistor (FET), further expanding the application prospects of micro/nano energy. In this paper, the research progress of tribotronics is systematically reviewed. Firstly, the mechanism of the CE effect and the working principles of TENG are introduced. Secondly, the regulation theory of tribo-potential on carrier transportation in semiconductor devices and the research status of tribotronic transistors are summarized. Subsequently, the applications of tribotronics in logic circuits and memory devices, smart sensors, and artificial synapses in recent years are demonstrated. Finally, the challenges and development prospects of tribotronics in the future are projected.

A Lamb wave is a guided wave that propagates within plate-like structures, with its vibration mode resulting from the coupling of a longitudinal wave and a shear vertical wave, which can be applied in sensors, filters, and frequency control devices. The working principle of Lamb wave sensors relies on the excitation and propagation of this guided wave within piezoelectric material. Lamb wave sensors exhibit significant advantages in various sensing applications due to their unique wave characteristics and design flexibility. Compared to traditional surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors, Lamb wave sensors can not only achieve higher frequencies and quality factors in smaller dimensions but also exhibit superior integration and multifunctionality. In this paper, we briefly introduce Lamb wave sensors, summarizing methods for enhancing their sensitivity through optimizing electrode configurations and adjusting piezoelectric thin plate structures. Furthermore, this paper systematically explores the development of Lamb wave sensors in various sensing applications and provides new insights into their future development.