Quanwen Xie
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Quanwen Xie has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Wenwang Wei
Guangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Chemical Engineering, Hezhou University, Hezhou 542899, China
2 shared publications Jin-Fang Li
Guangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Chemical Engineering, Hezhou University, Hezhou 542899, China
1 shared publication- Xiuning Xu
Guangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Chemical Engineering, Hezhou University, Hezhou 542899, China
1 shared publication - Yi Peng
Research Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, Nanning 530004, China
1 shared publication Yu-Xin Chen
Hezhou City Traditional Chinese Medicine Hospital Huangyao Hospital, Hezhou 542899, China
1 shared publicationYue-Fang Hu
Guangxi Key Laboratory of Calcium Carbonate Resources Comprehensive Utilization, College of Materials and Chemical Engineering, Hezhou University, Hezhou 542899, China
1 shared publication
Latest Publications
- Open Access
Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques
AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.
Open AccessImpact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques
AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.