Kaixuan Fan
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Kaixuan Fan has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Fan Yang
Center for Joint Quantum Studies, Department of Physics, Tianjin University, Tianjin 300350, China
1 shared publication - Guangtong Liu
Institute of Physics, Chinese Academy of Sciences
1 shared publication - Hechen Ren
Tianjin University
1 shared publication - Li Lu
Institute of Physics, Chinese Academy of Sciences
1 shared publication - Peng Zhu
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
1 shared publication - Ruiwen Shao
Beijing Institute of Technology
1 shared publication
Latest Publications
- Open Access
Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers
Understanding the physical and chemical processes at the interfaces of metals and topological insulators is crucial for the development of the next generation of topological quantum devices. Here, we report the discovery of robust superconductivity in Pd/Bi2Se3 bilayers fabricated by sputtering Pd on the surface of Bi2Se3. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi2Se3. In the diffusion region, Pd chemically reacts with Bi2Se3 and forms a layer of PdBiSe, a known superconductor with a bulk transition temperature of 1.5 K. Our work provides a method for the introduction of superconductivity into Bi2Se3, laying the foundation for the development of sophisticated Bi2Se3-based topological devices.
Open AccessSuperconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers
Understanding the physical and chemical processes at the interfaces of metals and topological insulators is crucial for the development of the next generation of topological quantum devices. Here, we report the discovery of robust superconductivity in Pd/Bi2Se3 bilayers fabricated by sputtering Pd on the surface of Bi2Se3. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi2Se3. In the diffusion region, Pd chemically reacts with Bi2Se3 and forms a layer of PdBiSe, a known superconductor with a bulk transition temperature of 1.5 K. Our work provides a method for the introduction of superconductivity into Bi2Se3, laying the foundation for the development of sophisticated Bi2Se3-based topological devices.