Ying-Rong Ho
Research Subjects
Ying-Rong Ho has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
- Ching-Chiun Wang
Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, Taiwan
1 shared publication - Jian-Zhi Chen
Graduate Institute of Photonics, National Changhua University of Education, Changhua 50007, Taiwan
1 shared publication - Jung-Jie Huang
Department of Electronic Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan
1 shared publication - Shih-Chin Lin
Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, Taiwan
1 shared publication - Yao-Tsung Yang
Design and Materials for Medical Equipment and Devices, Da-Yeh University, Changhua 515006, Taiwan
1 shared publication
Latest Publications
- Open Access
- 20 November 2024
- Published by MDPI AG in Micromachines
- Vol. 15 (11) , 1402
Performance Improvement of TiO2 Ultraviolet Photodetectors by Using Atomic Layer Deposited Al2O3 Passivation Layer
This study employed atomic layer deposition (ALD) to fabricate an Al2O3 passivation layer to optimize the performance of ultraviolet (UV) photodetectors with a TiO2-nanorod-(NR)-containing active layer and a solid–liquid heterojunction (SLHJ). To reduce the processing time and enhance light absorption, a hydrothermal method was used to grow a relatively thick TiO2-NR-containng working electrode. Subsequently, a 5-nm-thick Al2O3 passivation layer was deposited on the TiO2 NRs through ALD, which has excellent step coverage, to reduce the surface defects in the TiO2 NRs and improve the carrier transport efficiency. X-ray photoelectron spectroscopy revealed that the aforementioned layer reduced the defects in the TiO2 NRs. Moreover, high-resolution transmission electron microscopy indicated that following the annealing treatment, Al, Ti, and O atoms diffused across the interface between the Al2O3 passivation layer and TiO2 NRs, resulting in the binding of these atoms to form Al–Ti–O bonds. This process effectively filled the oxygen vacancies in TiO2. Examination of the photodetector device revealed that the photocurrent-to-dark current ratio exhibited a difference of four orders of magnitude (10−4 to 10−8 A), with the switch-on and switch-off times being 0.46 and 3.84 s, respectively. These results indicate that the Al2O3 passivation layer deposited through ALD can enhance the photodetection performance of SLHJ UV photodetectors with a TiO2 active layer.
- 20 November 2024
- Published by MDPI AG in Micromachines
- Vol. 15 (11) , 1402
Open AccessPerformance Improvement of TiO2 Ultraviolet Photodetectors by Using Atomic Layer Deposited Al2O3 Passivation Layer
This study employed atomic layer deposition (ALD) to fabricate an Al2O3 passivation layer to optimize the performance of ultraviolet (UV) photodetectors with a TiO2-nanorod-(NR)-containing active layer and a solid–liquid heterojunction (SLHJ). To reduce the processing time and enhance light absorption, a hydrothermal method was used to grow a relatively thick TiO2-NR-containng working electrode. Subsequently, a 5-nm-thick Al2O3 passivation layer was deposited on the TiO2 NRs through ALD, which has excellent step coverage, to reduce the surface defects in the TiO2 NRs and improve the carrier transport efficiency. X-ray photoelectron spectroscopy revealed that the aforementioned layer reduced the defects in the TiO2 NRs. Moreover, high-resolution transmission electron microscopy indicated that following the annealing treatment, Al, Ti, and O atoms diffused across the interface between the Al2O3 passivation layer and TiO2 NRs, resulting in the binding of these atoms to form Al–Ti–O bonds. This process effectively filled the oxygen vacancies in TiO2. Examination of the photodetector device revealed that the photocurrent-to-dark current ratio exhibited a difference of four orders of magnitude (10−4 to 10−8 A), with the switch-on and switch-off times being 0.46 and 3.84 s, respectively. These results indicate that the Al2O3 passivation layer deposited through ALD can enhance the photodetection performance of SLHJ UV photodetectors with a TiO2 active layer.