BZBoyu Zuo

Boyu Zuo

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

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Boyu Zuo has a total of 11 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Grain orientation dependent superelasticity in ferroelectrics for enhanced electromechanical properties

    by Xuhui Lou, Boyu Zuo, Xu Hou, Xu-Sheng Yang, Wentao Jiang, Qingyuan Wang, Haidong Fan, Jie Wang, Ying Liang, Xiaobao Tian

    The practical application of ferroelectric ceramics is limited by their inherent electromechanical property constraints. Superelasticity, characterized by considerable recoverable strain and piezoelectric coefficient in ferroelectrics, offers a promising solution for advanced actuators and sensors. However, the complex electromechanical coupling effects caused by different oriented grains pose challenges for implementing superelasticity in ferroelectric ceramics. This paper elucidates that superelasticity is prominently exhibited within small orientation regimes but becomes suppressed as the orientation increases. Grain orientation affects electromechanical properties: Young's modulus abruptly drops from 91 to 3 GPa near the superelastic transition at the orientation angle of 0°, while it stabilizes around the intrinsic modulus at 45°. The peak piezoelectric coefficient reaches 5000 pC/N near the transition at 0°, exceeding the previously reported values by an order of magnitude. The proposed grain orientation-centered mechanism of superelasticity offers valuable theoretical support for designing ferroelectric devices with grain distributions, particularly in textured ceramics.


  • Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization

    by Boyu Zuo, Xuhui Lou, Yu Chen, Wentao Jiang, Qingyuan Wang, Haidong Fan, Chuan Qiao, Xiaobao Tian

    The pulse-based rapid domain structure switching method in ferroelectric memristors has stability and other issues, limiting its applications. In this study, we perform atomic simulations to investigate the polarization domain switching behavior of ferroelectric materials under non-pulse torsional loading. During torsion, uniformly distributed spontaneous polarization transitions to predominantly in-plane polarization and finally evolves to predominantly out-of-plane polarization. The out-of-plane polarization remains stable during torsion and can be adjusted through mechanical and electric fields to achieve multistability. This evolution behavior is attributed to the rapid increase in initial normal stress and continuous cyclic variation of shear stress during torsion. The non-pulse control method developed in this study lays the foundation for further research and utilization of polarization regulation in ferroelectric materials, potentially advancing the application of ferroelectric memristors.