Nathaniel Findling
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Nathaniel Findling has a total of 33 co-authors. Here are the top co-authors by number of shared publications:
- Abdallah Ougazzaden
CNRS, Georgia Tech—CNRS International Research Lab 1 , 2958, 2 rue Marconi, 57070 Metz
1 shared publication - C Borrazás
Universidad de Buenos Aires, Facultad de Ciencias Exactas y Naturales, Departamento de Física,1428 Buenos Aires, Argentina
1 shared publication - Charles Renard
Airbus Operations SAS, Toulouse, France
1 shared publication - Chushuang Xiang
Université Paris-Saclay
1 shared publication - David Troadec
University Lille, CNRS, Centrale Lille, Junia, University Polytechnique Hauts de France
1 shared publication - Edson R. Cardozo de Oliveira
Université Paris-Saclay, Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
1 shared publication
Latest Publications
- Open Access
- 1 September 2026
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 44 (5)
Effect of metal/semiconductor interface on the resistance of a nonalloyed p-GaN/Ni–Au contact
The formation of an ohmic p-contact represents a critical step in the processing of GaN-based devices such as light-emitting diodes (LEDs). Thermal annealing in an O2-containing atmosphere at high temperature of a GaN/Ni–Au contact is mostly used today, while nonannealed contacts have been reported to provide much lower electrical performances. We experimentally evidence that the quality of the contact before annealing strongly depends on the nature of the Ni/GaN interface. Electrical results are correlated to microstructural and physicochemical analysis using high-resolution transmission scanning electron microscopy coupled with energy dispersive x-ray spectroscopy for this purpose. Using an annealed contact formed in standard conditions as a reference, we evidence from in situ treatment of the interface before metal evaporation that interfacial Ga-Oxide plays a detrimental role. We show that the metal evaporation conditions may strongly impact the physicochemical composition of the interface before annealing. We obtain nonannealed contact with electrical characteristics close to that of an annealed, standard one, using a reduced evaporation rate, in our evaporation conditions. This result is of interest for the processing of p-GaN contacts at a low thermal budget.
- 1 September 2026
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 44 (5)
Open AccessEffect of metal/semiconductor interface on the resistance of a nonalloyed p-GaN/Ni–Au contact
The formation of an ohmic p-contact represents a critical step in the processing of GaN-based devices such as light-emitting diodes (LEDs). Thermal annealing in an O2-containing atmosphere at high temperature of a GaN/Ni–Au contact is mostly used today, while nonannealed contacts have been reported to provide much lower electrical performances. We experimentally evidence that the quality of the contact before annealing strongly depends on the nature of the Ni/GaN interface. Electrical results are correlated to microstructural and physicochemical analysis using high-resolution transmission scanning electron microscopy coupled with energy dispersive x-ray spectroscopy for this purpose. Using an annealed contact formed in standard conditions as a reference, we evidence from in situ treatment of the interface before metal evaporation that interfacial Ga-Oxide plays a detrimental role. We show that the metal evaporation conditions may strongly impact the physicochemical composition of the interface before annealing. We obtain nonannealed contact with electrical characteristics close to that of an annealed, standard one, using a reduced evaporation rate, in our evaporation conditions. This result is of interest for the processing of p-GaN contacts at a low thermal budget.
- Open Access
- 3 November 2025
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 58 (45) , 455301
Structural and nanoacoustic characterization of Co/Pt ferromagnetic superlattices
Superlattices (SLs) with spatially modulated elastic properties-particularly those based on III–V semiconductors-have emerged as key platforms for reaching the ultrahigh-frequency (GHz–THz) regime in nanoacoustic devices. The exploration of alternative materials with multifunctional properties remains a rich and promising area of research. In this work, we investigate the structural, magnetic, and acoustic properties of nanometric Co/Pt SLs. X-ray reflectometry reveals a well-defined periodicity, while scanning transmission electron microscopy combined with local compositional analysis shows that the SLs exhibit a compositional modulation rather than sharp interfaces. The polycrystalline nature of the structures is confirmed by both x-ray diffraction and transmission electron microscopy. Magnetization measurements indicate the presence of perpendicular magnetic anisotropy at higher Co concentrations. Picosecond acoustic experiments demonstrate that the SLs support short-lived acoustic modes up to 900 GHz, along with up to seven acoustic echoes with frequencies ranging from 40 to 250 GHz. These findings open a path toward investigating phonon-driven magnetization dynamics in such structures, establishing a foundational step toward the development of magnetoacoustic devices operating at ultrahigh frequencies.
- 3 November 2025
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 58 (45) , 455301
Open AccessStructural and nanoacoustic characterization of Co/Pt ferromagnetic superlattices
Superlattices (SLs) with spatially modulated elastic properties-particularly those based on III–V semiconductors-have emerged as key platforms for reaching the ultrahigh-frequency (GHz–THz) regime in nanoacoustic devices. The exploration of alternative materials with multifunctional properties remains a rich and promising area of research. In this work, we investigate the structural, magnetic, and acoustic properties of nanometric Co/Pt SLs. X-ray reflectometry reveals a well-defined periodicity, while scanning transmission electron microscopy combined with local compositional analysis shows that the SLs exhibit a compositional modulation rather than sharp interfaces. The polycrystalline nature of the structures is confirmed by both x-ray diffraction and transmission electron microscopy. Magnetization measurements indicate the presence of perpendicular magnetic anisotropy at higher Co concentrations. Picosecond acoustic experiments demonstrate that the SLs support short-lived acoustic modes up to 900 GHz, along with up to seven acoustic echoes with frequencies ranging from 40 to 250 GHz. These findings open a path toward investigating phonon-driven magnetization dynamics in such structures, establishing a foundational step toward the development of magnetoacoustic devices operating at ultrahigh frequencies.
- Open Access
- 25 January 2025
- Published by Elsevier in Thin Solid Films
- Vol. 812
Phase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition
- 25 January 2025
- Published by Elsevier in Thin Solid Films
- Vol. 812
Open AccessPhase controlled epitaxy of wurtzite ZnS thin films by metal organic chemical vapor deposition