ABAlessandro Baserga

Alessandro Baserga

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Alessandro Baserga has a total of 60 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    The Interplay of Phonons and Subgap States Governs Ultrafast Carrier Dynamics in Layered HgPSe3

    by Alessandro Baserga, Miłosz Rybak, Micol Bertolotti, Antonella Treglia, Samim Sardar, Valentino JadriškO, Matteo Ghezzi, Giuseppe Maria Paternò, Cosimo D’ANdrea, Annamaria Petrozza, et al.

    Two-dimensional van der Waals materials display rich nonequilibrium physics due to their reduced dimensionality and strong light–matter interactions. Layered metal phosphorus trichalcogenides (MPX3) feature bandgaps spanning the visible to ultraviolet range and exhibit a complex interplay between excitons, phonons, and defects. Here we use static and time-resolved photoluminescence and femtosecond broadband transient reflectivity to investigate the temperature-dependent ultrafast carrier dynamics in layered HgPSe3, a semiconductor with a quasi-direct bandgap near 2 eV. We identify distinct sub-bandgap photoluminescence features that become prominent at low temperature. Their temperature and fluence dependence strongly indicate radiative recombination involving localized states. The transient reflectivity map displays three features associated with interband optical transitions in the visible range, as corroborated by density functional theory band structure calculations. These features exhibit fluence-dependent decay dynamics, indicating a competition between carrier localization into sub-bandgap states, state-filling effects that limit the available electronic phase space for hot-carrier relaxation, and phonon-bottleneck-limited carrier cooling. Our results provide new insights into the ultrafast carrier dynamics of HgPSe3 and establish a framework for understanding the role of sub-bandgap states in MPX3 semiconductors, with potential implications for broadband optoelectronic and photodetection applications.

  • Open Access

    Ultrafast Optical Hydrogen Modulator in a Palladium Hydride Nanoparticulate Thin Film

    by Floriana Morabito, Paula H. Aguado, Luca Pedicone, Alessandro Baserga, Andrés R. Botello Méndez, Stefano Dal Conte, Christoph Gadermaier, Giulio Cerullo, Zeila Zanolli, Marcel Di Vece

    Electro‐ and thermochromic materials change their optical properties through the physical movement of atomic species within thin films. This movement is induced by electric fields or high temperatures and occurs on the second to minute timescale. Ultrashort laser pulses can manipulate atomic positions on the femto‐ to picosecond timescale. In this work, we modulated the optical properties of a palladium hydride nanoparticulate thin film on the picosecond timescale using femtosecond optical pulses. Density functional theory calculations confirmed that the incident photons activate interstitial hydrogen atoms and the subsequent trajectories of these atoms affect the dielectric properties of the palladium hydride thin film. These responsive interstitial hydrogen atoms provide a modulator for optical switching on the picosecond timescale and could lead to faster photochromic materials.

  • Open Access

    Coherent Electron–Phonon Coupling in Two-Dimensional Bi 2 Se 3 Nanoplatelets Studied with Ultrafast Spectroscopy

    by Alessandro Baserga, Jara F. Vliem, Rhea Kumar, Riccardo Reho, Andrés R. Botello-Méndez, Daniel Vanmaekelbergh, Zeila Zanolli, Giulio Cerullo

    Electron–phonon coupling in two-dimensional Bi2Se3 nanoplatelets was investigated using broadband ultrafast pump–probe spectroscopy (probe 1.6 to 2.8 eV) at 293 and 78 K. The high time resolution resolves coherent phonon oscillations on picosecond time scales, specifically the out-of-plane A1g (1) (2.12 THz) and A1g (2) (4.95 THz) optical modes, and a low-frequency interlayer breathing mode (∼0.4 THz), arising from standing waves defined by the nanoplatelet thickness. By mapping the probe energy dependence of the oscillation amplitude, we find that the A1g (1) mode couples most strongly to an electronic transition near 1.97 eV, which we assign using the computed band structure to transitions along the high-symmetry Γ–K line. The absence of Raman-active Eg modes is explained by a symmetry analysis based on the displacive excitation of coherent phonons. These results characterize carrier–lattice interactions in 2D Bi2Se3, which are relevant for optoelectronic device applications.

  • Open Access

    Spin Injection and Emission Helicity Switching in a 2D Perovskite/WSe 2 Heterostructure

    by Jakub Jasiński, Francesco Gucci, Thomas Brumme, Swaroop Palai, Armando Genco, Alessandro Baserga, Jonas D. Ziegler, Takashi Taniguchi, Kenji Watanabe, Mateusz Dyksik, et al.

    The ability to initialize and control long-lived spin populations in lead halide perovskites is essential to enable their use in spintronics technologies. Here, we show that the interlayer exciton observed in the photoluminescence spectrum of a (BA)2PbI4/WSe2 monolayer heterostructure below the intralayer exciton transitions exhibits circular dichroism, whose sign can be modulated by tuning the excitation energy. Equilibrium and transient absorption measurements reveal an additional absorptive feature between the A and B excitons of WSe2 with hybrid character. This resonance arises from hybridized valence band states of the two materials and plays a key role in controlling the helicity of the interlayer exciton emission. The tunable spin polarization demonstrated here, with the WSe2 monolayer effectively acting as a tunable spin filter, represents an important step toward the use of 2D perovskites in opto-spintronics applications.


  • Open Access

    Unraveling the Nanosecond Photoresponse of Layered HgPSe3

    by Nikolas Antonatos, Artur P. Herman, Beatriz de Simoni, Karolina Ciesiołkiewicz, Eduard Belas, Marián Betušiak, Roman Grill, Kalyan Jyoti Sarkar, Amutha Subramani, David Sedmidubský, et al.

    Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX3, where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe3, a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe3-based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.


  • Spectral broadening of µJ-level pulses around 8 µm in a Germanium-based multi-pass scheme

    by Francesco Gucci, Alessandro Baserga, Luca Moretti, Davide Gatti, Matteo Corti, Cristian Manzoni, Giulio Cerullo, Marco Marangoni, Guglielmo Vesco

    A 2.6-fold spectral broadening of mid-infrared femtosecond µJ-level pulses has been achieved using an unfolded multi-pass configuration of germanium plates and zinc selenide lenses. This method maintains a throughput higher than 60% while preserving the spatial quality and the temporal duration of the input beam. Numerical simulations match the experimental results and show the potential to tailor the parameters of the cell to obtain different spectra.