Le Jia Sun
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Le Jia Sun has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Hao Yuan
Xidian University, School of Microelectronics
1 shared publication - Qing Wen Song
Xidian University
1 shared publication - Xiao Yan Tang
Xidian University
1 shared publication Yan Cong Liu
Xidian University
1 shared publication- Yu Zhou
Xidian University
1 shared publication - Yuming Zhang
Xidian University
1 shared publication
Latest Publications
- Open Access
- 23 August 2024
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
- Vol. 360, 139-144
Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
In this work, 4H-SiC p-i-n diodes with excellent single-pulse avalanche energy density (EAS) with positively beveled mesa termination have been demonstrated. The fabrication of this junction termination extension (JTE) obviates ion implantation and requires only etching process. With its uniform electric field and temperature distribution, the fabricated 4H-SiC p-i-n diodes show breakdown voltage (BV) of 886V (98.4% of the parallel-plane limit) and the inductive avalanche energy density of ~10.4J/cm2@1mH. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted. The results confirm that this structure exhibits great capability potential in power applications.
- 23 August 2024
- Published by Trans Tech Publications, Ltd. in Solid State Phenomena
- Vol. 360, 139-144
Open AccessExcellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
In this work, 4H-SiC p-i-n diodes with excellent single-pulse avalanche energy density (EAS) with positively beveled mesa termination have been demonstrated. The fabrication of this junction termination extension (JTE) obviates ion implantation and requires only etching process. With its uniform electric field and temperature distribution, the fabricated 4H-SiC p-i-n diodes show breakdown voltage (BV) of 886V (98.4% of the parallel-plane limit) and the inductive avalanche energy density of ~10.4J/cm2@1mH. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted. The results confirm that this structure exhibits great capability potential in power applications.