JXJunping Xi

Junping Xi

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Junping Xi has a total of 7 co-authors. Here are the top co-authors by number of shared publications:

  • Chengcheng Liu

    Department of Mechanical and Automotive Engineering, Science and Technology College of Hubei University of Arts and Science, Xiangyang 441025, China

    1 shared publication
  • Li Ma

    Guangxi Key Laboratory of Functional Information Materials and Intelligent Information Processing, Nanning Normal University, Nanning 530001, China

    1 shared publication
  • Linkun Zhang

    State Key Laboratory for Powder Metallurgy, Central South University, Changsha 410083, China

    1 shared publication
  • Nenghui Huang

    Department of Mechanical and Automotive Engineering, Science and Technology College of Hubei University of Arts and Science, Xiangyang 441025, China

    1 shared publication
  • Pingying Tang

    Guangxi Key Laboratory of Functional Information Materials and Intelligent Information Processing, Nanning Normal University, Nanning 530001, China

    1 shared publication
  • Wei Zhou

    Department of Mechanical and Automotive Engineering, Science and Technology College of Hubei University of Arts and Science, Xiangyang 441025, China

    1 shared publication

Latest Publications

  • Open Access

    Carrier Screening and Selective Junction Field Control in Piezoelectric Sandwich Fibers with PNP or NPN Doping Under a Local Temperature Change

    by Chengcheng Liu, Wei Zhou, Nenghui Huang, Junping Xi

    Spatially selective thermal regulation of multijunction piezoelectric structures requires the control of both the local junction response and coupling between neighboring junctions. A finite-length analytical model is developed for a symmetric piezoelectric sandwich fiber with PNP or NPN doping under a prescribed local temperature change. Within a static, closed, one-dimensional weak-junction approximation, the solution separates the reference junction field from the thermally induced polarization response and accounts for carrier screening and global carrier conservation. Finite-element and nonlinear drift calculations assess solution accuracy and the carrier linearization. Centered heating reduces one junction field while enhancing the other, whereas independently controlled thermal regions enable simultaneous point cancelation through their differential response. In the representative weak-junction case, opposite temperature increments of approximately 0.0165 K cancel the two-junction point fields; minimizing the field over finite junction neighborhoods instead leaves approximately 30% of the reference root-mean-square field. Fixed-interval potential differences further show that point cancelation does not eliminate the electrical response across a junction neighborhood. Thermal spreading and constitutive uncertainty shift the required temperature settings. The prescribed carrier populations do not represent dark-equilibrium ZnO at room temperature. The resulting control relations characterize an idealized weak-junction system, rather than a validated semiconductor device, and provide conditional guidance for thermal-source placement and control-target selection.

  • Open Access

    Unveiling High-Pressure Behavior of Sc3AlC MAX Phase: A Comprehensive Theoretical Study on Structural, Mechanical, Dislocation, and Electronic Properties

    by Junping Xi, Zhipeng Wang, Linkun Zhang, Li Ma, Pingying Tang

    The structural, mechanical, dislocation, and electronic properties of the Sc3AlC MAX phase under applied pressure are investigated in detail using first-principles calculations. Key parameters, including lattice parameter ratios, elastic constants, Young’s modulus, bulk modulus, shear modulus, brittle-to-ductile behavior, Poisson’s ratio, anisotropy, Cauchy pressure, yield strength, Vickers hardness, and energy factors, are systematically analyzed as a function of applied pressure. The results demonstrate that the Sc3AlC MAX phase exhibits remarkable mechanical stability within the pressure range of 0 to 60 GPa. Notably, applied pressure markedly improves its mechanical properties, such as resistance to elastic, bulk, and shear deformations. The B/G ratio suggests a tendency toward ductile behavior with increasing pressure, and the negative Cauchy pressure indicates the directional characteristics of interatomic bonding in nature. Vickers hardness and yield strength increase under pressures of 0 to 10 GPa and then decrease sharply above 50 GPa. High pressure suppresses dislocation nucleation due to the increased energy factors, along with twinning deformation. Furthermore, electronic structure analysis confirms that high pressure enhances the interatomic bonding in the Sc3AlC MAX phase, while the enhancement effect is not substantial. This study offers critical insights for designing MAX phase materials for extreme environments, advancing applications in aerospace and electronics fields.