Tianmeng Zhang

Electrical connectors play a vital role in ensuring reliable signal transmission in high-frequency microsystems. This study explores the impact of microscale scratch-induced surface roughness on the alternating current (AC) contact impedance of RF coaxial connectors. Unlike traditional approaches that assume idealized surface conditions, controlled micro-defects were introduced at the central contact interface to establish a quantitative relationship between surface morphology and signal degradation. An equivalent circuit model was constructed to account for local impedance variations and the cumulative effects of cascaded connector interfaces. The model was validated using S-parameter measurements obtained from vector network analyzer (VNA) testing, showing strong agreement with simulation results. Experimental results reveal that the low-roughness (0.4 μm) contact surfaces lead to degraded signal integrity due to insufficient micro-contact formation. In contrast, scratch-induced moderate roughness (0.8–4.8 μm) improves transmission performance, although signal quality declines as roughness increases within this range. These effects are further amplified in multi-connector configurations due to accumulated impedance mismatches. This work provides new insight into the coupling between microscale surface features and frequency-domain transmission characteristics, offering practical guidance for surface engineering, contact design, and the development of miniaturized, high-reliability radio frequency interconnects for next-generation communication systems.

The temperature variations of interconnected coaxial connectors in RF circuits are strongly influenced by the contact surface characteristics and the ferromagnetic properties of the electroplated materials. In this study, specially structured N-DIN connectors with either magnetic or non-magnetic plating were designed. A dedicated high-frequency, high-power RF experimental platform was set up to monitor and measure the temperature and power of the connectors. Finite element analysis (FEA) was employed to simulate the current density and temperature distribution across the samples. Furthermore, an equivalent circuit model of the central conductor was established by integrating electrical contact theory with the magnetic hysteresis effect. Based on the voltage–temperature (V–T) relation and the derived magnetic field–magnetoresistance (H–M) relation, a predictive model for the temperature rise of the central conductor was formulated. Experimental results demonstrated good agreement with simulation predictions, validating the proposed model and highlighting the critical role of plating material properties in high-power RF connectors’ thermal effect.