Aibek S. Nurpeissov
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Aibek S. Nurpeissov has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Aivaras Kareiva
Institute of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania
1 shared publication - Aleksej Zarkov
Institute of Chemistry, Faculty of Chemistry and Geosciences, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania
1 shared publication - Batsay M. Sadykova
Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Campus #3, St. Kazhymukana 13, Astana Z01C0X0, Kazakhstan
1 shared publication - Raushan K. Shamiyeva
Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Campus #3, St. Kazhymukana 13, Astana Z01C0X0, Kazakhstan
1 shared publication - Sapargali Pazylbek
Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Campus #3, St. Kazhymukana 13, Astana Z01C0X0, Kazakhstan
1 shared publication - Temirulan. T. Alibay
Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Campus #3, St. Kazhymukana 13, Astana Z01C0X0, Kazakhstan
1 shared publication
Latest Publications
- Open Access
Recombination Luminescence and Electron–Hole Trapping Centers in BaSO4-Bi Phosphor
This study of the BaSO4-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi3+ ion, several recombination emissions and emission from the Bi2+ ion are observed. At 80 K, the recombination luminescence states and Bi2+ ion emission form combined electronic states. Upon heating of the BaSO4-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi2+ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi3+ ion.Open AccessRecombination Luminescence and Electron–Hole Trapping Centers in BaSO4-Bi Phosphor
This study of the BaSO4-Bi phosphor has revealed that the accumulated energy after external optical excitation exhibits specific characteristics. During irradiation with photon energy exceeding the bandgap, in addition to the intrinsic ultraviolet emission of the Bi3+ ion, several recombination emissions and emission from the Bi2+ ion are observed. At 80 K, the recombination luminescence states and Bi2+ ion emission form combined electronic states. Upon heating of the BaSO4-Bi phosphor, these combined electronic states decay into recombination emissions at 2.34 eV, 2.4 eV, 3.1 eV, and 2.7 eV, as well as Bi2+ ion emission at 1.97 eV. It is assumed that the 2.34 eV, 2.4 eV, and 3.1 eV emissions are associated with the recombination of electrons released from ionized electron trapping centers with nonequivalently localized holes in the host lattice. The 2.7 eV emission is attributed to the decay of an exciton formed by electron–hole recombination near a Bi3+ ion.