Yasushi Ishikawa
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Yasushi Ishikawa has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Kenji Ishikawa
Nagoya University
1 shared publication Moritaka Nakamura
Association of Super-advanced Electronics Technology (ASET) , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
1 shared publicationSatoshi Yamasaki
National Institute of Advanced Industrial Science and Technology (AIST) Diamond Research Center AIST TC 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
1 shared publication- Seiji Samukawa
Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
1 shared publication Yoshikazu Yamaoka
Association of Super-advanced Electronics Technology (ASET) , 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
1 shared publicationYuichi Yamazaki
National Institute of Advanced Industrial Science and Technology (AIST) Diamond Research Center AIST TC 2-13, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
1 shared publication
Latest Publications
- 15 April 2006
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 99 (8) , 083305
Surface reactions during etching of organic low-k films by plasmas of N2 and H2
Surface reactions during etching of organic low- film by and plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from and . The number of carbon dangling bonds were greater in processes where was present. The passivation of carbon dangling bonds leads to , , and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and .- 15 April 2006
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 99 (8) , 083305
Surface reactions during etching of organic low-k films by plasmas of N2 and H2
Surface reactions during etching of organic low- film by and plasmas were studied through observations of the surface resident species using in situ infrared spectroscopy and in vacuo electron-spin-resonance techniques. We observed surface modifications by the formation of CN and NH bonds after exposure to plasmas generated from and . The number of carbon dangling bonds were greater in processes where was present. The passivation of carbon dangling bonds leads to , , and CN functionalities, which are the precursors for etching products that are desorbed, which includes volatile forms such as HCN and .