Guilherme M. Germano
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Guilherme M. Germano has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Ana Flavia Nogueira
Institute of Chemistry
2 shared publications - André Felipe Vale Fonseca
Universidade Estadual de Campinas (UNICAMP)
2 shared publications - Douglas S. Ribeiro
Universidade Estadual de Campinas (UNICAMP)
2 shared publications - Francisco Chagas Marques
Universidade Estadual de Campinas (UNICAMP)
2 shared publications - Iván Mora-Seró
Universitat Jaume I
2 shared publications - Lucas Scalon
Universidade Estadual de Campinas (UNICAMP)
2 shared publications
Latest Publications
- 28 November 2025
- Published by Elsevier in Materials Today Chemistry
- Vol. 50
CdS quantum dot interlayer engineering for enhanced SnO2/perovskite interfaces in solar cells
- 28 November 2025
- Published by Elsevier in Materials Today Chemistry
- Vol. 50
CdS quantum dot interlayer engineering for enhanced SnO2/perovskite interfaces in solar cells
- Open Access
- 22 October 2025
- Published by American Chemical Society (ACS) in ChemRxiv
CdS Quantum Dot Interlayer Engineering for Enhanced SnO₂/Perovskite Interfaces in Solar Cells
Interfacial defects at the buried junction between the electron transport layer (ETL) and perovskite absorber critically hinder the performance of perovskite solar cells (PSCs). We report herein that a CdS quantum dot (QD) interlayer, deposited onto SnO₂ via a successive ionic layer adsorption and reaction method, provides an effective strategy to improve charge transport across this interface. The CdS QD layer not only suppresses oxygen vacancies but also reacts with hydroxyl groups on the SnO₂ surface, thereby improving surface potential uniformity and enhancing the electron extraction rate. Impedance spectroscopy further confirms improved interface homogeneity and charge transport, correlating with higher fill factor and short-circuit current densities. As a result, CdS modification enables a ∼25% efficiency enhancement on PSCs, highlighting the potential of QD-based interfacial engineering towards high-performance PSCs.
- 22 October 2025
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessCdS Quantum Dot Interlayer Engineering for Enhanced SnO₂/Perovskite Interfaces in Solar Cells
Interfacial defects at the buried junction between the electron transport layer (ETL) and perovskite absorber critically hinder the performance of perovskite solar cells (PSCs). We report herein that a CdS quantum dot (QD) interlayer, deposited onto SnO₂ via a successive ionic layer adsorption and reaction method, provides an effective strategy to improve charge transport across this interface. The CdS QD layer not only suppresses oxygen vacancies but also reacts with hydroxyl groups on the SnO₂ surface, thereby improving surface potential uniformity and enhancing the electron extraction rate. Impedance spectroscopy further confirms improved interface homogeneity and charge transport, correlating with higher fill factor and short-circuit current densities. As a result, CdS modification enables a ∼25% efficiency enhancement on PSCs, highlighting the potential of QD-based interfacial engineering towards high-performance PSCs.