D. Sabonis
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
D. Sabonis has a total of 15 co-authors. Here are the top co-authors by number of shared publications:
- Fabrizio Nichele
IBM Research Europe -Zurich Säumerstrasse 4 8803 Rüschlikon Switzerland
2 shared publications M. Coraiola
IBM Research Europe -Zurich Säumerstrasse 4 8803 Rüschlikon Switzerland
2 shared publicationsM. Hinderling
IBM Research Europe -Zurich Säumerstrasse 4 8803 Rüschlikon Switzerland
2 shared publicationsS. C. Ten Kate
IBM Research Europe -Zurich Säumerstrasse 4 8803 Rüschlikon Switzerland
2 shared publicationsS. Paredes
IBM Research Europe -Zurich Säumerstrasse 4 8803 Rüschlikon Switzerland
2 shared publicationsS. W. Bedell
2 shared publications
Latest Publications
- Open Access
Finite Length Effects and Coulomb Interaction in Ge Quantum Well-Based Josephson Junctions Probed with Microwave Spectroscopy
Proximitized Ge quantum wells have emerged as a novel platform for studying Andreev bound states (ABSs), due to their expected strong spin-orbit interaction and high mobility. Here, we used microwave spectroscopy techniques to investigate ABSs in Josephson junctions (JJs) realized in proximitized Ge quantum wells. Spectroscopic signatures observed in a 350 nm junction indicated the presence of multiple ABSs, and were reproduced with a model including finite-length effects. The ABS spectra measured for a $1.2~μ$m junction were explained by a model including three ABSs in two conduction channels and finite Coulomb interaction. Our work highlights the importance of interactions in JJs and serves as a basis for understanding and manipulating ABSs in Ge-based hybrid devices.
Open AccessFinite Length Effects and Coulomb Interaction in Ge Quantum Well-Based Josephson Junctions Probed with Microwave Spectroscopy
Proximitized Ge quantum wells have emerged as a novel platform for studying Andreev bound states (ABSs), due to their expected strong spin-orbit interaction and high mobility. Here, we used microwave spectroscopy techniques to investigate ABSs in Josephson junctions (JJs) realized in proximitized Ge quantum wells. Spectroscopic signatures observed in a 350 nm junction indicated the presence of multiple ABSs, and were reproduced with a model including finite-length effects. The ABS spectra measured for a $1.2~μ$m junction were explained by a model including three ABSs in two conduction channels and finite Coulomb interaction. Our work highlights the importance of interactions in JJs and serves as a basis for understanding and manipulating ABSs in Ge-based hybrid devices.
- Open Access
Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions
We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $Δ^{*}\approx48~\mathrm{μeV}$ and transmission $τ\approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~μm$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.Open AccessDirect microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions
We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $Δ^{*}\approx48~\mathrm{μeV}$ and transmission $τ\approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~μm$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.