LGLanfang Geng

Lanfang Geng

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Lanfang Geng has a total of 5 co-authors. Here are the top co-authors by number of shared publications:

  • Jicheng Ding

    School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002, China

    1 shared publication
  • Jun Zheng

    Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials, Ministry of Education, Anhui University of Technology, Ma’anshan 243002, China

    1 shared publication
  • Liuyan Zhang

    Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials, Ministry of Education, Anhui University of Technology, Ma’anshan 243002, China

    1 shared publication
  • Xiaoyu Hao

    Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials, Ministry of Education, Anhui University of Technology, Ma’anshan 243002, China

    1 shared publication
  • Ying Yang

    Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials, Ministry of Education, Anhui University of Technology, Ma’anshan 243002, China

    1 shared publication

Latest Publications

  • Open Access

    Precision-Tuned Magnetron Sputtering for High-Performance Metallized Copper Films

    by Ying Yang, Xiaoyu Hao, Liuyan Zhang, Jicheng Ding, Lanfang Geng, Jun Zheng

    In the present study, copper (Cu) films were deposited on polyethylene terephthalate (PET) substrates using direct-current (DC) magnetron sputtering technology. A systematic investigation was conducted on the effects of process parameters, such as target power, gas flow rate, and substrate temperature, on the microstructure and properties of copper films. The results showed that an increase in the target power resulted in enhanced film grain size, accompanied by a reduction in resistivity and an improvement in adhesion strength. Furthermore, resistivity increased monotonically with elevated gas flow rates, whereas the adhesion strength was found to achieve its maximum at a flow rate of 350 mL/min. In addition, substrate temperature variations had negligible influence on the film grain size and resistivity; nevertheless, the adhesion progressively decreased with increasing substrate temperature. A set of optimal parameters (3 kW, 350 mL/min, −15 °C) was determined based on the comprehensive evaluation of deposition efficiency, conductivity and adhesion performance. The Cu film prepared under these conditions exhibited low resistivity (8.37 × 10−8 Ω·m) and improved adhesion strength (166 gf/mm). Therefore, it is concluded that high performance of metallized Cu films could be achieved by fine-tuning deposition parameters.