Cong Han
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Cong Han has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Haiming Qin
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications 1 , 9 Wenyuan Road, Nanjing 210023
1 shared publication - Hanbing Fang
Gusu Laboratory of Materials Science, No. 388 Ruoshui Road, Suzhou 215123, China
1 shared publication - Hao Zhang
Suzhou Laboratory, 388 Roushui Road, Suzhou 215123, China
1 shared publication - Weijing Shao
Suzhou Laboratory, 388 Roushui Road, Suzhou 215123, China
1 shared publication - Xinpeng Wang
Suzhou Laboratory, 388 Roushui Road, Suzhou 215123, China
1 shared publication - Yi Liu
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunication, Nanjing 210023, China
1 shared publication
Latest Publications
- Open Access
Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO2 by Interface Engineering
Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al2O3 layer atop Zr-doped HfO2. The TiN/Al2O3/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device’s conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams.
Open AccessControlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO2 by Interface Engineering
Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al2O3 layer atop Zr-doped HfO2. The TiN/Al2O3/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device’s conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams.