Lavrenty Gennady Gutsev
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Lavrenty Gennady Gutsev has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Bala Ramu Ramachandran
Institute for Micromanufacturing, Louisiana Tech University, Ruston, LA 71272, USA
2 shared publications - Sean M. Nations
National Energy Technology Laboratory, United States Department of Energy, Pittsburgh, PA 15236, USA
2 shared publications - Shengnian Wang
Institute for Micromanufacturing, Louisiana Tech University, Ruston, LA 71272, USA
2 shared publications - Yuhua Duan
NETL
2 shared publications - Gennady Lavrenty Gutsev
Department of Physics, Florida A&M University, Tallahassee, FL 32307, USA
1 shared publication - Oleg Prezhdo
Department of Chemistry and Chemical Biology, University of New Mexico, Albuquerque, NM 87106, USA
1 shared publication
Latest Publications
- Open Access
- 5 March 2026
- Published by MDPI AG in Nanomaterials
- Vol. 16 (5) , 328
Band Structure-Driven Design of a α-CsPbI3 Ammonia Sensor for Industrial Applications
We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the IPb and PbI antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at PbI sites and Cs at IPb sites, significantly altering recombination pathways. Detailed analysis reveals that NH3 reduces anharmonicity at IPb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH3NH2 and NO2, show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.
- 5 March 2026
- Published by MDPI AG in Nanomaterials
- Vol. 16 (5) , 328
Open AccessBand Structure-Driven Design of a α-CsPbI3 Ammonia Sensor for Industrial Applications
We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the IPb and PbI antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at PbI sites and Cs at IPb sites, significantly altering recombination pathways. Detailed analysis reveals that NH3 reduces anharmonicity at IPb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH3NH2 and NO2, show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.
- Open Access
- 9 January 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (2) , 276
Redox Chemistry of the Subphases of α-CsPbI2Br and β-CsPbI2Br: Theory Reveals New Potential for Photostability
The logic in the design of a halide-mixed APb(I1−xBrx)3 perovskite is quite straightforward: to combine the superior photovoltaic qualities of iodine-based perovskites with the increased stability of bromine-based perovskites. However, even small amounts of Br doped into the iodine-based materials leads to some instability. In the present report, using first-principles computations, we analyzed a wide variety of α-CsPbI2Br and β-CsPbI2Br phases, compared their mixing enthalpies, explored their oxidative properties, and calculated their hole-coupled and hole-free charged Frenkel defect (CFD) formations by considering all possible channels of oxidation. Nanoinclusions of bromine-rich phases in α-CsPbI2Br were shown to destabilize the material by inducing lattice strain, making it more susceptible to oxidation. The uniformly mixed phase of α-CsPbI2Br was shown to be highly susceptible towards a phase transformation into β-CsPbI2Br when halide interstitial or halide vacancy defects were introduced into the lattice. The rotation of PbI4Br2 octahedra in α-CsPbI2Br allows it either to transform into a highly unstable apical β-CsPbI2Br, which may phase-segregate and is susceptible to CFD, or to phase-transform into equatorial β-CsPbI2Br, which is resilient against the deleterious effects of hole oxidation (energies of oxidation >0 eV) and demixing (energy of mixing 2Br offers an opportunity to obtain a mixed perovskite material with enhanced photostability and an intermediate bandgap between its constituent perovskites.
- 9 January 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (2) , 276
Open AccessRedox Chemistry of the Subphases of α-CsPbI2Br and β-CsPbI2Br: Theory Reveals New Potential for Photostability
The logic in the design of a halide-mixed APb(I1−xBrx)3 perovskite is quite straightforward: to combine the superior photovoltaic qualities of iodine-based perovskites with the increased stability of bromine-based perovskites. However, even small amounts of Br doped into the iodine-based materials leads to some instability. In the present report, using first-principles computations, we analyzed a wide variety of α-CsPbI2Br and β-CsPbI2Br phases, compared their mixing enthalpies, explored their oxidative properties, and calculated their hole-coupled and hole-free charged Frenkel defect (CFD) formations by considering all possible channels of oxidation. Nanoinclusions of bromine-rich phases in α-CsPbI2Br were shown to destabilize the material by inducing lattice strain, making it more susceptible to oxidation. The uniformly mixed phase of α-CsPbI2Br was shown to be highly susceptible towards a phase transformation into β-CsPbI2Br when halide interstitial or halide vacancy defects were introduced into the lattice. The rotation of PbI4Br2 octahedra in α-CsPbI2Br allows it either to transform into a highly unstable apical β-CsPbI2Br, which may phase-segregate and is susceptible to CFD, or to phase-transform into equatorial β-CsPbI2Br, which is resilient against the deleterious effects of hole oxidation (energies of oxidation >0 eV) and demixing (energy of mixing 2Br offers an opportunity to obtain a mixed perovskite material with enhanced photostability and an intermediate bandgap between its constituent perovskites.