Nikolaos Moutzouris

Semiconducting clathrates are a distinct class of inclusion compounds with considerable interest for thermoelectric applications. We report here the synthesis, crystal structure and thermoelectric properties of Sn₃₈Sb₈I₈. The compound was synthesized via planetary ball milling of the corresponding elements for 6 h and then sintering of amorphous mixture at 620 K for 3 days. The crystal structure of the polycrystalline product was determined via X-ray powder diffraction and Rietveld refinement as a type-I clathrate (a = 12.0390(2), space group Pm-3n, No. 223) with mixed-occupied Sn/Sb framework sites and fully occupied I guest sites. Further analysis on the chemical composition, nanomorphology and vibrational modes of the material was carried out via Induced-Coupled-Plasma–Mass Spectrometry, SEM/EDX microscopy and Raman spectroscopy, respectively. Thermoelectric measurements were performed on hot-pressed samples with ca. 98% of the crystallographic density. The clathrate compound behaves as an n-type semiconductor with a band gap of 0.737 eV and exhibits a maximum ZT of 0.0016 at 473 K. Theoretical calculations on the formation enthalpy, electron density of states and transport properties provide insights into the experimentally observed physical behavior.