CXChenchao Xie

Chenchao Xie

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Chenchao Xie has a total of 39 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Conformal oxides decouple chemical stability and energetics at NiO x /perovskite interfaces

    by Chenchao Xie, Shuai You, Melissa A. Davis, Ross A. Kerner, Kelly Schutt, Ryan A. DeCrescent, Tianran Liu, Manuel A. Rodriguez, Rosemary C. Bramante, Christian Velez, et al.

    Nickel oxide (NiO x ) is a common hole transport layer (HTL) in perovskite photovoltaics, but the chemical reactivity of NiOx surfaces accelerates degradation when contacting perovskites. We developed an ultrathin, conformal tin oxide (SnO x ) interlayer to suppress interfacial reactivity between NiO x and perovskite. SnO x is typically an electron transport layer, but we show that the energy alignment can be modified for hole extraction using molecules with dipoles. This synergy yielded high efficiency in perovskite photovoltaic devices and showed an ~10x improvement in T 90 lifetime in open-circuit conditions under AM1.5G at 65°C. This structure also improves resilience to thermomechanical durability, as minimodules retained 95.7% of their initial performance after 1000 thermal cycles (−65° to 85°C), highlighting the importance of interfaces for robust perovskite photovoltaic modules.


  • Open Access

    Enabling Long Term, Shelf‐Stable Perovskite Solar Cells: Alumina Barriers to Protect Perovskite Devices from Moisture and Oxygen

    by Melissa A. Davis, Kelly Schutt, Duong Nguyen Minh, Xinwen Zhang, Chenchao Xie, Ross A. Kerner, Tianran Liu, Matthew O. Reese, Laura T. Schelhas, Michael D. Kempe, et al.

    Current encapsulation architectures for thin‐film metal halide perovskite do not adequately eliminate all ambient stressors. Here, we develop low transmission rate barrier layers using atomic layer deposited (ALD) aluminum oxide grown directly on the completed photovoltaic (PV) device stack to provide an additional seal, prior to full packaging. We investigate the effect of deposition temperature and oxidant chemistries on the barrier growth for protection of perovskite photovoltaic devices. We characterize the layers individually, then integrate into devices to detail the tradeoff between protection and deposition compatibility. To enhance compatibility and impermeability, we present an approach using water as the aluminum oxidant during nucleation and switching from water to ozone for the remainder of the growth. At 50 nm, the barrier results in a water vapor transmission rate (WVTR) of 4.5·10 −4 g/m 2 /day, and 1,000‐hour device stability under 45°C with 85% relative humidity without further packaging. This barrier provides sufficient protection to enable minimal degradation of the perovskite solar cells while completely submerged in water for 140 minutes. Additionally, we characterize the oxygen transmission rate (OTR) to be 0.49 cm 3 /m 2 /day at 23°C and 0% relative humidity, which is 1.5 orders of magnitude improvement over the OTR of the current encapsulation.


  • Open Access

    Electrochemical quantification of phosphonic acid passivated surface sites of NiO x for perovskite solar cells

    by Chenchao Xie, Duong Nguyen Minh, Rita Kret, Jacob Hoffman, Angelo P. Rillera, Regan George Wilks, Roberto Félix, Michael A. Anderson, Johannes Frisch, Marcus Bär, et al.

    A new electrochemical metric quantifies detrimental redox activity in nickel oxide hole transport layers, directly linking surface reactivity to solar cell efficiency and guiding targeted passivation for stable, high-performance photovoltaics.