VAVolkan Arslan
Volkan Arslan
*This is an algorithmically generated author record based on publicly available information.
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Volkan Arslan has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Adel Hama
Organic Bioelectronics Laboratory, Division of Biomedical Sciences, King Abdullah University of Science and Technology (KAUST), Saudi Arabia
1 shared publication - David Ohayon
Institute for Functional Intelligent Materials National University of Singapore Singapore Singapore
1 shared publication - Iain McCulloch
Department of Chemistry Chemistry Research Laboratory University of Oxford Oxford UK
1 shared publication - Ilke Uguz
Department of Electrical Engineering, Columbia University, New York, NY 10027, USA
1 shared publication - Kenneth L. Shepard
Columbia University
1 shared publication - Rajendar Sheelamanthula
Physical Science and Engineering Division KAUST Thuwal Saudi Arabia
1 shared publication
Latest Publications
- Open Access
- 15 January 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-13
Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology
Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios ( $${10}^{5}$$ ) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 $${\mu m}^{2}$$ .- 15 January 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-13
Open AccessFlexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology
Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios ( $${10}^{5}$$ ) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 $${\mu m}^{2}$$ .