Ningru Shang

To overcome the physical constraints during the miniaturization of conventional semiconductor devices, spintronics is playing an increasingly prominent role. The Rashba effect, characterized by spin–momentum locking, has emerged as a promising solution to address challenges. Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) break spatial inversion symmetry, creating favorable conditions for the Rashba effect. Based on first-principles calculations, 2D Janus materials XMoYZ₂ (X = S/Se/Te; Y = Si/Ge; Z = N/P) were investigated, with strain, external electric field and charge doping employed to modulate the Rashba effect. The strain results reveal that the Rashba constants of XMoYZ₂ increase significantly with compressive strain. Specifically, after applying uniaxial strain, the Rashba constant of TeMoSiP₂ is enhanced to ~2.2 times its initial value. Compressive strain reduces atomic spacing, enhances orbital overlap, and increases spin–orbit coupling (SOC) strength. All the TeMoYZ₂ materials exhibit significant anisotropy under uniaxial strain, which is favorable for spin-oriented transport. SeMoGeP₂ shows an almost linear Rashba constant–electric field correlation, while TeMoGeP₂ and TeMoSiP₂ show non-monotonic variation. The Rashba constant of TeMoSiP₂ can be enhanced to ~2.7 times its intrinsic value under either positive or negative applied electric fields. Charge doping induces negligible changes in the SOC effect. Finally, the optical absorption properties of TeMoGeP₂, TeMoSiN₂, and TeMoSiP₂ were investigated. This study clarifies the mechanism underlying the enhancement of Rashba constants in XMoYZ₂ materials, enriching the research landscape of spintronics.