Haoran Wang

In recent years, microelectromechanical systems (MEMS) filters exploiting structural nonlinearity and coupled resonance have enabled programmable passband shaping beyond traditional single-peak designs, yet they still face low operating frequencies and limited electrical tuning range. Here, leveraging 1:1 internal resonance, we propose a gate-programmable tuning strategy for two-dimensional (2D) material-based nanoelectromechanical systems (NEMS), enabling high-frequency operation and wide-range reconfigurability. Benefiting from the high resonant frequency and wide electrostatic tunability of 2D materials such as MoS₂, our theoretical analysis indicates wide-range programmability up to $f/f_0\approx 200\%$. Sweeping $V_{g1}=V_{g2}$ from 9 to 16 V while maintaining $\approx 1:1$ frequency matching shifts the passband upward quasi-linearly at $4.4~\mathrm{MHz}/\mathrm{V}$. In contrast, with the coupling strength nearly unchanged, mV-level bias mismatch perturbs the frequency ratio by ${10}^{-5}$, enabling highly sensitive bandwidth trimming from 3.18 to 5.20 kHz, supporting a two-step strategy of coarse center-frequency tuning followed by fine bandwidth control. To broaden the bandwidth, we further analyze a three-drum case: with $V_{g1}=V_{g2}=V_{g3}=16 \mathrm{V}$, the bandwidth reaches 21.79 kHz with a 5056.05 dB/MHz transition slope and 0.95 dB ripple, which is nearly 4 times wider than the two drum case with the same gate voltage. This study shows that 1:1 internal resonance can be used to tune the bandpass response of NEMS resonators. All results are obtained from theoretical modeling and numerical simulations.