Qi Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Qi Zhang has a total of 16 co-authors. Here are the top co-authors by number of shared publications:
- Euyheon Hwang
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
2 shared publications - Chan-Ho Yang
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
1 shared publication Hyobin Nam
1 shared publication- Ji-Sang Park
SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea
1 shared publication - Jing Li
School of Integrated Circuits Dalian University of Technology Dalian China
1 shared publication - Kenji Watanabe
National Institute for Materials Science
1 shared publication
Latest Publications
- Open Access
- 21 July 2026
- Published by Springer Nature in Communications Materials
- Vol. 7 (1)
Decoupled drain-gate control of synaptic plasticity in a MoS2 flash memory
- 21 July 2026
- Published by Springer Nature in Communications Materials
- Vol. 7 (1)
Open AccessDecoupled drain-gate control of synaptic plasticity in a MoS2 flash memory
- Open Access
- 23 April 2026
- Published by Wiley in Advanced Electronic Materials
- Vol. 12 (10)
Optimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts
Minimizing contact resistance between metal electrodes and perovskites remains a critical challenge in developing perovskite‐based electronic and optoelectronic devices. Despite extensive experimental and theoretical efforts to minimize the contact resistance, atomic‐level insights into metal‐perovskite interfaces remain insufficiently understood. In this paper, we investigate the electronic and transport properties of 2D hybrid organic–inorganic perovskites, specifically (BA) 2 PbBr 4 and (PEA) 2 PbBr 4 , which consist of monolayer bromide perovskite layers with different organic spacer molecules: n‐butylammonium (BA) and phenylethylammonium (PEA) cations. We provide a comprehensive analysis of the Au/perovskites interface, considering two contact configurations, i.e., top‐contact and edge‐contact. We perform first‐principles calculations and use the nonequilibrium Green's function formalism to calculate the transport characteristics. We find that a Schottky barrier forms in the top‐contact configuration, but the edge‐contact configuration shows ohmic behavior for both Au/(BA) 2 PbBr 4 and Au/(PEA) 2 PbBr 4 . The edge‐contact configuration also enables highly efficient charge injection with a negligible interfacial tunneling barrier due to Au‐induced midgap states. For the top contact configuration, Au/(PEA) 2 PbBr 4 shows better transport behavior compared to (BA) 2 PbBr 4 , which is attributed to its lower tunneling barrier and higher density of metal‐induced midgap states. This work provides theoretical guidelines for designing low‐resistance metal‐2D hybrid perovskite contacts.
- 23 April 2026
- Published by Wiley in Advanced Electronic Materials
- Vol. 12 (10)
Open AccessOptimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts
Minimizing contact resistance between metal electrodes and perovskites remains a critical challenge in developing perovskite‐based electronic and optoelectronic devices. Despite extensive experimental and theoretical efforts to minimize the contact resistance, atomic‐level insights into metal‐perovskite interfaces remain insufficiently understood. In this paper, we investigate the electronic and transport properties of 2D hybrid organic–inorganic perovskites, specifically (BA) 2 PbBr 4 and (PEA) 2 PbBr 4 , which consist of monolayer bromide perovskite layers with different organic spacer molecules: n‐butylammonium (BA) and phenylethylammonium (PEA) cations. We provide a comprehensive analysis of the Au/perovskites interface, considering two contact configurations, i.e., top‐contact and edge‐contact. We perform first‐principles calculations and use the nonequilibrium Green's function formalism to calculate the transport characteristics. We find that a Schottky barrier forms in the top‐contact configuration, but the edge‐contact configuration shows ohmic behavior for both Au/(BA) 2 PbBr 4 and Au/(PEA) 2 PbBr 4 . The edge‐contact configuration also enables highly efficient charge injection with a negligible interfacial tunneling barrier due to Au‐induced midgap states. For the top contact configuration, Au/(PEA) 2 PbBr 4 shows better transport behavior compared to (BA) 2 PbBr 4 , which is attributed to its lower tunneling barrier and higher density of metal‐induced midgap states. This work provides theoretical guidelines for designing low‐resistance metal‐2D hybrid perovskite contacts.