Kohki Tsujimoto
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Kohki Tsujimoto has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
Jin Inajima
Department of Physics and Electronics, Osaka Metropolitan University 2 , Sakai, Osaka 599-8531
1 shared publication- Junya Yoshinaga
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
1 shared publication - Masataka Higashiwaki
Osaka Metropolitan University
1 shared publication - Takafumi Kamimura
Advanced ICT Research Institute, Green ICT Device Advanced Development Center, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kita, Koganei, Tokyo, 184-8795, JAPAN
1 shared publication - Yoshiki Iba
Tokyo University of Agriculture and Technology
1 shared publication - Yoshinao Kumagai
Tokyo University of Agriculture and Technology
1 shared publication
Latest Publications
- Open Access
- 1 June 2026
- Published by AIP Publishing in APL Electronic Devices
- Vol. 2 (2)
Effects of nitrogen radical irradiation on device characteristics of vertical β-Ga2O3(010) FinFETs
We investigated effects of nitrogen radical irradiation on device characteristics of vertical β-Ga2O3(010) fin field-effect transistors (FinFETs). A positive shift in threshold voltage with improved in-plane distribution uniformity occurred for nitridated FinFETs due to fixed negative charges formed in nitridated layers on fin sidewalls, indicating that the nitridation treatment can effectively re-establish the post-etched sidewall surface conditions. The breakdown voltage (Vbr) was also uniformly distributed for the nitridated FinFETs, while the specific on-resistance (Ron) was reduced by adopting multi-fin structure and increasing fin width. The nitridated Ga2O3(010) multi-FinFET with a fin width of 300 nm achieved normally off operation with superior device characteristics of a subthreshold swing of 73 mV/decade, an Ion/Ioff ratio of >1010, an Ron of 9.5 mΩ cm2, a Vbr of 1213 V, and a power figure of merit of 1.55 × 108 W/cm2.
- 1 June 2026
- Published by AIP Publishing in APL Electronic Devices
- Vol. 2 (2)
Open AccessEffects of nitrogen radical irradiation on device characteristics of vertical β-Ga2O3(010) FinFETs
We investigated effects of nitrogen radical irradiation on device characteristics of vertical β-Ga2O3(010) fin field-effect transistors (FinFETs). A positive shift in threshold voltage with improved in-plane distribution uniformity occurred for nitridated FinFETs due to fixed negative charges formed in nitridated layers on fin sidewalls, indicating that the nitridation treatment can effectively re-establish the post-etched sidewall surface conditions. The breakdown voltage (Vbr) was also uniformly distributed for the nitridated FinFETs, while the specific on-resistance (Ron) was reduced by adopting multi-fin structure and increasing fin width. The nitridated Ga2O3(010) multi-FinFET with a fin width of 300 nm achieved normally off operation with superior device characteristics of a subthreshold swing of 73 mV/decade, an Ion/Ioff ratio of >1010, an Ron of 9.5 mΩ cm2, a Vbr of 1213 V, and a power figure of merit of 1.55 × 108 W/cm2.