Kevin Janssen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Kevin Janssen has a total of 14 co-authors. Here are the top co-authors by number of shared publications:
- Anurag Vohra
IMEC, Leuven, Belgium
1 shared publication Arne Debald
Aixtron SE 2 , 52134 Herzogenrath
1 shared publication- Benoit Van Troeye
Imec 1 , 3001 Leuven
1 shared publication Chen Wu
Imec 1 , 3001 Leuven
1 shared publication- Christoph Adelmann
IMEC
1 shared publication Dirk Fahle
Aixtron SE 2 , 52134 Herzogenrath
1 shared publication
Latest Publications
- 31 August 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (9)
Low-resistivity epitaxial Ru films on AlN (0001)/Si (111) for interconnect applications
Ru is a promising candidate for future post-Cu interconnect metallization because of its short electron mean free path and barrier-free reliability. Here, we demonstrate epitaxial Ru thin films on CMOS-compatible AlN (0001)/Si (111) grown by physical vapor deposition. X-ray diffraction, Rutherford backscattering ion channeling, and transmission electron microscopy confirm the single-crystal nature of the Ru films with a honeycomb epitaxial relationship. The films exhibit low resistivity of 7.8 μΩ cm at 30 nm thickness and a high residual resistivity ratio of 11, approaching bulk Ru values and outperforming polycrystalline Ru and Cu in the ultrathin film regime. Additional epitaxial growth on 300 mm wafers establishes epitaxial Ru on AlN (0001)/Si (111) as a scalable, CMOS-compatible platform for low-resistivity interconnect metallization.
- 31 August 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (9)
Low-resistivity epitaxial Ru films on AlN (0001)/Si (111) for interconnect applications
Ru is a promising candidate for future post-Cu interconnect metallization because of its short electron mean free path and barrier-free reliability. Here, we demonstrate epitaxial Ru thin films on CMOS-compatible AlN (0001)/Si (111) grown by physical vapor deposition. X-ray diffraction, Rutherford backscattering ion channeling, and transmission electron microscopy confirm the single-crystal nature of the Ru films with a honeycomb epitaxial relationship. The films exhibit low resistivity of 7.8 μΩ cm at 30 nm thickness and a high residual resistivity ratio of 11, approaching bulk Ru values and outperforming polycrystalline Ru and Cu in the ultrathin film regime. Additional epitaxial growth on 300 mm wafers establishes epitaxial Ru on AlN (0001)/Si (111) as a scalable, CMOS-compatible platform for low-resistivity interconnect metallization.