Flavie Braud

Rationale: Surface‐assisted laser desorption/ionization mass spectrometry (SALDI‐MS) is an approach derived from matrix‐assisted laser desorption/ionization (MALDI)‐MS which overcomes the drawbacks associated with the use of organic matrices required to co‐crystallize with the analytes. Indeed, nanomaterials commonly used in SALDI‐MS as inert surfaces to promote desorption/ionization (D/I) ensure straightforward direct deposition of samples while providing mass spectra with ions only related to the compound of interest. The objective of this study was to develop a novel SALDI‐MS approach based on steel plates that are surfaces very rapidly and easily tuned to perform the most efficient peptide detection as possible. To compare the SALDI efficacy of such metal substrates, D/I efficiency and deposit homogeneity were evaluated according to steel plate fabrication processes. Methods: The studied surfaces were nanostructured steel plates that were chemically modified by perfluorosilane and textured according to different frequencies and laser writing powers. The capacity of each tested 100 surfaces was demonstrated by comparative analyses of a mixture of standard peptides ( m / z 600–3000) performed with a MALDI‐TOF instrument enabling MALDI, SALDI and imaging experiments. Results: A peptide mix was used to screen the different surfaces depending on their D/I efficiency and their ability to ensure homogeneous deposit of the samples. For that purpose, deposition homogeneity was visualized owing to reconstructed ionic images from all protonated or sodiated ions of the 10 peptides constituting the standard mix. Conclusions: Seven surfaces were then selected satisfying the required D/I efficiency and deposit homogeneity criteria. Results obtained with these optimal surfaces were then compared with those recorded by MALDI‐MS analyses used as references.

With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for upcoming wireless generation. The degradation of performance due to substrate coupling is a key problem to address for telecommunication circuits, especially for the high throw count switches in RF front ends. In this context, a fast, flexible and local laser ablation technique of the silicon handler allows for the membrane suspension of large millimeter-scale circuits. This approach enables the evaluation of the ultimate performance in the absence of the substrate, i.e., without dissipative losses and substrate-induced non-linear effects, on capacitive comb coupling structures and RF switches. Compared to high-resistivity SOI substrates, the high frequency characterization of RF membrane switches reveals a superior linearity performance with a reduction in second and third harmonics by 17.7 dB and 7.8 dB, respectively. S-parameter analysis also reveals that membrane suspension entails insertion losses that are improved by 0.38 dB and signal reflection lowered by 4 dB due to a reduced off-state capacitance. With reference to a trap-rich substrate, the membrane suspension also achieves an additional 7.8 dB reduction in the second harmonic, indicating that there is still scope for improvement in this figure of merit. The obtained results demonstrate a new way to evaluate optimized circuit performance using post-fabrication substrate engineering.

Mitigation of substrate coupling effects in RF switch by localized substrate removal using laser processing

A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 {\mu}m to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 {\mu}m3 {\mu}s-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications.

High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q-factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9 -5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.

High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate engineering method that enables improvement of quality factors of already fabricated inductors on SOI. A novel femtosecond laser milling process is utilized for the fabrication of locally suspended membranes of inductors with handler silicon completely etched. Such flexible membranes suspended freely on the BOX show up to 92 % improvement in Q factor for single turn inductor. The improvement in Q-factor is reported on large sized inductors due to reduced parallel capacitance which allows enhanced operation of inductors at high frequencies. A compact model extraction methodology has been developed to model inductor membranes. These membranes have been utilized for the improvement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1 dB improvement in noise figure has been reported by taking an existing design and suspending the input side inductors of the LNA circuit. The substrate engineering method reported in this work is not only applicable to inductors but also to active circuits, making it a powerful tool for enhancement of RF devices.

We demonstrate the use of femtosecond laser micromachining for ablating macro-sized cavities in crystalline silicon. The method employed is laser milling in which the focused laser beam is raster scanned over the area to be removed. We report the achievement of very high volume ablation rates for the cavity of up to 8.48x10⁶ μm³ s^-1. To achieve such high rates, we make use of a high average power fiber laser source of 1030 nm wavelength and variable per pulse energy of up to 100 μJ. By carefully controlling the process variables such as pulse energy, repetition rate and scanner speed, the tradeoffs between micromachining quality and ablation rate are quantified. The developed process is applied on Siliconon-Insulator (SOI) wafers for improving performance of RF devices. By making use of laser removal and an additional step of selective silicon etch using XeF₂, handler silicon is removed completely under RF circuits such as SP9T switch. The local removal of silicon under such circuits completely eliminates the losses and non-linearities caused by the coupling of RF signals to the semi-conducting substrate. Small-signal and large-signal RF measurements are performed before and after substrate removal to quantify the performance gain. The obtained performance after substrate removal is better than specialized RF-SOI substrates such as trap-rich SOI. This is of practical significance for next generation wireless technologies like 5G which operate at higher frequencies with stringent specifications. The proposed method is also potentially useful for fabricating membrane based devices in SOI technology such as pressure sensors.