Electron tunneling through GaAs grain boundaries
Authors:
- 15 March 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 471-474
Abstract
Measurements of the zero‐bias dc conductance G0 and high frequency capacitance have been made on GaAs bicrystals doped in the range of 4×1017–2×1018 cm−3. The conductance displays a non‐Arrhenius temperature dependence with high temperature values of ∂(ln G0)/∂(1/kT) less than the barrier heights deduced from the capacitance. Theoretical calculations of transbarrier currents using the unified approach of Fonash show that thermally assisted tunneling currents are important.Keywords
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