Cryogenic Forming/Breakdown of HfO$_{x}$ for Reduced C2C Variability in Filamentary RRAM
- 1 July 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (7) , 4133-4139
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation at Georgia Tech Institute for Matter and Systems, a member of the National Nanotechnology Coordinated Infrastructure (ECCS-2025462)
- NSF (CCF-2218604)
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