Fluorine effects on the dipole structures of the Al2O3 thin films and characterization by spectroscopic ellipsometry

Fluorine-terminated chemical bonds and dipole structures within an ${\mathrm{Al}}_2{\mathrm{O}}_3$ layer were investigated in this study. Spectroscopic ellipsometry (SE) was employed to estimate the characteristics of fluorinated ${\mathrm{Al}}_2{\mathrm{O}}_3$ . The parameters $S_0$ and ${\lambda }_0$ extracted from SE were analyzed to detect the influence of F-terminated bonding. Al–O bonds were replaced by the Al–F bonds after fluorine was implanted on the silicon substrate. A physical model of dipole structures was proposed explaining the F incorporation phenomenon.