The effect of fluorine in silicon dioxide gate dielectrics
Authors:
- P.J. WrightPWP.J. Wright
- K.C. SaraswatKSK.C. Saraswat
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (5) , 879-889
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injectionApplied Physics Letters, 1988
- The effect of fluorine on gate dielectric properties1987
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- Analysis of stress in chemical vapor deposition tungsten silicide filmJournal of Applied Physics, 1985
- Anodic nitridation of silicon and silicon dioxideIEEE Transactions on Electron Devices, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction FormationJournal of the Electrochemical Society, 1984
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- THE PROPERTIES OF ELECTRON AND HOLE TRAPS IN THERMAL SILICON DIOXIDE LAYERS GROWN ON SILICON1978
- Mobile fluoride ions in SiO2Journal of Applied Physics, 1975