Stoichiometry of thin silicon oxide layers on silicon
Authors:
- 1 February 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (3) , 105-107
Abstract
The composition of anodically and thermally grown silicon oxide layers was determined by backscattering and channeling measurements with 2.0‐MeV 4He+ ions. The oxide thickness was determined by ellipsometry and, for anodic films, the silicon removal rate was also determined by layer removal measurements. The surface layer consists of stoichiometric silicon dioxide plus a silicon‐rich transition layer between the substrate and the silicon dioxide. The number of silicon atoms in this layer was found to be 6 × 1015 atoms/cm2 (about three atomic layers).Keywords
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