Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates
- 3 March 2017
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 214 (9)
Abstract
No abstract availableKeywords
Funding Information
- GraNitE
This publication has 44 references indexed in Scilit:
- Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diodeJournal of Applied Physics, 2011
- Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrateSemiconductor Science and Technology, 2010
- AlGaN/GaN HEMT With 300-GHz $f_{\max}$IEEE Electron Device Letters, 2010
- Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructuresJournal of Applied Physics, 2009
- Temperature-dependent electrical characteristics of bulk GaN Schottky rectifierJournal of Applied Physics, 2007
- Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructuresApplied Physics Letters, 2006
- Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructuresJournal of Applied Physics, 2005
- Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metalSolid-State Electronics, 2004
- Effects of Interfacial Thin Metal Layer for High-Performance Pt–Au-Based Schottky Contacts to AlGaN–GaNIEEE Transactions on Electron Devices, 2004
- Recent advances in Schottky barrier conceptsMaterials Science and Engineering: R: Reports, 2001