Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma
Abstract
No abstract availableKeywords
This publication has 49 references indexed in Scilit:
- Prediction of Fluctuations in Plasma–Wall Interactions Using an Equipment Engineering SystemJapanese Journal of Applied Physics, 2009
- CF A 2Σ+–X 2Π and B 2Δ–X 2Π study by broadband absorption spectroscopy in a plasma etch reactor: Determination of transition probabilities, CF X 2Π concentrations, and gas temperaturesThe Journal of Chemical Physics, 2003
- Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide filmsJournal of Vacuum Science & Technology A, 1997
- Enhanced dry etching of silicon with deuterium plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
- SiO2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon GasJapanese Journal of Applied Physics, 1992
- Ammonium Hexafluorosilicate Formation during Plasma Etching of Silicon NitrideJournal of the Electrochemical Society, 1988
- Hydrogen-Induced Defects in Silicon by CF4/x% H2 (0≤x≤ 100) RIE and H2 PlasmaMRS Proceedings, 1987
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966