Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser
Open Access
- 1 January 2013
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 49 (3) , 208-210
Abstract
The first room‐temperature operation of a transistor vertical‐cavity surface‐emitting laser (T‐VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T‐VCSEL is electrically a pnp‐type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple‐quantum‐well active layer, an Si/SiO 2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter‐collector voltage, showing a voltage‐controlled operation mode. A low threshold base‐current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous‐wave operation was performed up to 50°C.Keywords
This publication has 9 references indexed in Scilit:
- A 55Gb/s directly modulated 850nm VCSEL-based optical link2012
- High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/sElectronics Letters, 2012
- Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunnelingApplied Physics Letters, 2012
- Surface Emission Vertical Cavity Transistor LaserIEEE Photonics Technology Letters, 2012
- Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulationApplied Physics Letters, 2011
- Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laserOptical and Quantum Electronics, 2011
- Performance optimisation of epitaxially regrown 1.3-μm vertical-cavity surface-emitting lasersIET Optoelectronics, 2009
- The transistor laserIEEE Spectrum, 2006
- Room temperature continuous wave operation of a heterojunction bipolar transistor laserApplied Physics Letters, 2005