Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
Authors:
- Yong Tae KimYKYong Tae Kim
- Chang Woo LeeCLChang Woo Lee
- Suk-Ki MinSMSuk-Ki Min
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12S)
Abstract
The thermal stability of plasma-enhanced chemical-vapor-deposited tungsten nitride (PECVD-W-N) thin film has been investigated as a diffusion barrier between Al or Au and Si during subsequent annealing at 550-850°C. The atomic concentrations of N in as-deposited W100-x N x films are varied from 0 to 75 at.% corresponding to NH3/WF6 ratio, and their resistivities are varied from 10-460 µΩ·cm. Rutherford backscattering spectrometry, Auger electron depth profiles, X-ray diffraction and transmission electron microscopy show that 900 Å PECVD-W67N33 film interposed between Al or Au and Si is less permeable than sputtered TiN and PECVD-W film due to interstitial N atoms and Si/W67N33/Au maintaining the integrity of interface while the furnace post annealing is carried out at 850°C for 30 min.Keywords
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