Deep Silicon Macropores Filled with Copper by Electrodeposition
Authors:
- Cheng FangCFCheng Fang
- Eugen FocaEFEugen Foca
- Sufan XuSXSufan Xu
- Jürgen CarstensenJCJürgen Carstensen
- Helmut FöllHFHelmut Föll
- 1 January 2007
- journal article
- research article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 154 (1) , D45-D49
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
- Microrod and Microtube Formation by Electrodeposition of Metal into Ordered Macropores Prepared in p-Type SiliconJournal of the Electrochemical Society, 2006
- Kinetics of Metal Deposition in the Process of Electroless Fabrication of Porous InP-Cu NanocompositeElectrochemical and Solid-State Letters, 2005
- Additive-Free Superfilling in Damascene Cu Electrodeposition Using Microcontact PrintingElectrochemical and Solid-State Letters, 2004
- Proceedings of the 3rd International Conference Porous Semiconductors – Science and TechnologyPhysica Status Solidi (a), 2003
- Formation and application of porous siliconMaterials Science and Engineering: R: Reports, 2002
- Monte Carlo Simulation of the Electrodeposition of CopperJournal of the Electrochemical Society, 2002
- Iminophosphorane-mediated carbodiimide metathesisChemical Communications, 2000
- Growth Kinetics for Copper Deposition on Si(100) from Pyrophosphate SolutionJournal of the Electrochemical Society, 2000
- Copper Deposition on HF Etched Silicon Surfaces: Morphological and Kinetic StudiesJournal of the Electrochemical Society, 1996
- The Physics of Macropore Formation in Low Doped n‐Type SiliconJournal of the Electrochemical Society, 1993