Electric field tuning of magnetization in an antiferroelectric‐based heterostructure: Example of NMG/PLZST/NMG
- 3 February 2019
- journal article
- research article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 102 (7) , 3809-3813
Abstract
A magnetoelectric (ME) heterostructure was fabricated by depositing a Ni‐Mn‐Ga (NMG) magnetic film on an antiferroelectric (AFE) PLZST—(Pb, La)(Zr, Sn, Ti)O 3 —ceramic substrate. Significant and reversible electric field‐induced relative magnetization changes ( ∆M/M 0 ) were firstly observed in this magnetic/AFE heterostructure, and the ∆ M/M 0 vs electric field loops have been found to correspond well with the strain‐electric field curve of PLZST ceramic. The maximum ∆ M/M 0 variation can reach 15%, indicating an obvious strain‐mediated converse magnetoelectric (CME) effect. A maximum CME coefficient of 1.14 × 10 ‐9 s/m was obtained at the switching electric fields of PLZST. The collected results suggest that AFE materials with a large electric‐field‐induced phase transition strain could be alternative candidates in ME coupling heterostructures.Keywords
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