Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Denis Remiens has a total of 100 co-authors. Here are the top co-authors by number of shared publications:

  • E. Cattan

    IEMN-DOAE-MIMM team, CNRS UMR 8520, Bat. P3, Cité scientifique , Villeneuve d'Ascq, 59655, France

    12 shared publications
  • E. Fribourg-Blanc

    LETI—CEA/GRENOBLE, 17, rue des Martyrs , Grenoble Cedex 9 , 38054 , France

    6 shared publications
  • Freddy Ponchel

    IEMN-DOAE- CNRS UMR 8520, Université polytechnique Hauts-de-France (UPHF), Valenciennes, France

    6 shared publications
  • C. Soyer

    IEMN-DOAE-MIMM UMR CNRS 8520, Université de Valenciennes et du Hainaut-Cambrésis, Valenciennes Cedex 9, France

    5 shared publications
  • Genshui Wang

    Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , 1295 Dingxi Road, Shanghai 200050, People's Republic of China

    4 shared publications
  • M. Detalle

    IEMN - DOAE MIMM team, CNRS UMR 8520, Cité Scientifique, Bat. P3 , 59655 , Villeneuve d'Ascq Cedex , France

    4 shared publications

Latest Publications

  • Open Access

    C-Axis Oriented LiNbO3 Thin Film Grown by Chemical Beam Epitaxy for Surface Acoustic Wave Device Applications

    by Nikolay Smagin, Thanh Ngoc Kim Bui, Zakariae Oumekloul, Rahma Moalla, William Maudez, Estelle Wagner, Marc Duquennoy, Rayen Kalai Mathlouthi, Yves Deblock, Hatem Dahmani, et al.

    High-frequency surface acoustic wave (SAW) devices require piezoelectric thin films combining strong electromechanical coupling, high acoustic velocity, and compatibility with scalable fabrication. Lithium niobate (LiNbO3) is a promising material, but the growth of high-quality thin films remains challenging because of lithium volatility and process-control issues. In this work, chemical beam epitaxy (CBE) was investigated as an alternative route for the deposition of c-axis-oriented LiNbO3 thin films on C-plane sapphire at a relatively low growth temperature of 400 °C. Structural characterization confirmed high crystalline quality, with clear (006) and (0012) XRD reflections and a rocking-curve full width at half maximum of 0.04°. To evaluate acoustic performance, a SAW delay line and a one-port resonator were fabricated on 350 nm thick films using e-beam lithography. The devices operated in the 1–3 GHz range and exhibited electromechanical coupling factors of about 0.3% for the Rayleigh mode at 1.7 GHz and 3% for the Sezawa mode at 2.75 GHz. Propagation velocities ranged from 5094 to 8250 m/s, and the Rayleigh-mode resonator quality factor reached about 500. These results demonstrate the feasibility of CBE-grown LiNbO3 films for SAW device applications.

  • Open Access

    In-Situ Nanoindentation Surface Topography of Lead-Free Piezoelectric Thin Films

    by Maxence Bigerelle, Julie Lemesle, Alex Montagne, Denis Remiens

    Surface roughness significantly affects the performance of microelectromechanical systems (MEMS) and piezoelectric films. This study investigates the impact of surface roughness on the mechanical properties of thin piezoelectric films using nanoindentation and scanning probe microscopy (SPM). Four piezoelectric films with different thicknesses (220, 350, and 450 nm) and substrate configurations (LNO/SiO2/Si or LNO/Si) were analyzed. A discriminant analysis revealed that the fractal dimension is more effective than the arithmetic mean height (Sa) for distinguishing surfaces, with only 2% misclassification versus 25% for Sa. A multiscale analysis identified the Smr2 parameter with low-pass filtering at 140 nm as highly effective for surface discrimination, achieving only 0.1% misclassification. The analysis of the roughness parameter Sa at various scales showed that band-pass filtering at 500 nm yielded a 0.7% misclassification rate, indicating its relevance for fractal roughness characterization. Most relevant roughness parameters for mechanical property correlation were found: Smr2 with low-pass filtering at 500 nm correlated best with hardness (R2 = 0.82), and Vvc with low-pass filtering at 2 nm correlated best with reduced elastic modulus (R2 = 0.84). These results demonstrate that surface roughness features like valley volume and voids significantly impact the apparent mechanical properties of piezoelectric films.


  • Open Access

    Growth of Low-Temperature Epitaxial Lithium Niobate Thin Films and Guided-Wave Optical Properties

    by Thanh Ngoc Kim Bui, Estelle Wagner, Rahma Moalla, William Maudez, Karim Dogheche, Romain Bachelet, Bruno Masenelli, Giacomo Benvenuti, Denis Rémiens, El Hadj Dogheche

    LiNbO3 thin films are grown on a c-plane (0001) sapphire wafer at a relatively low substrate temperature by chemical beam vapor deposition (CBVD) in Sybilla equipment. Raman measurements only evidence the LiNbO3 phase, while HR-XRD diffractograms demonstrate a c-axis-oriented growth with only (006) and (0012) planes measured. The rocking curve is symmetric, with a full width at half maximum (FWHM) of 0.04°. The morphology and topography observed by SEM and AFM show very low roughness, with rms equaling 2.0 nm. The optical properties are investigated by a guided-wave technique using prism coupling. The ordinary refractive index (no) and extraordinary refractive index (ne) at different wavelengths totally match with the LiNbO3 bulk, showing the high microstructural quality of the film. The film composition is estimated by Raman and bi-refringence and shows a congruent or near-stoichiometric LiNbO3.


  • Open Access

    Effects of Reaction Parameters on the Geometry and Crystallinity of Hydrothermally Synthesized ZnO Nanorods for Bio-Fouling Applications

    by Abderrahmane Hamdi, Chin Sing Lim, Mohamed Aymen Ben Achour, Ali Alshehri, Mervat Alamri, Dominique Deresmes, Serena Lay-Ming Teo, Denis Remiens, El Hadj Dogheche

    In this present work, we have successfully synthesized vertical aligned ZnO nanorod arrays (ZnO NRs) on conductive stainless-steel substrate. These ZnO NRs were obtained by using a low temperature, low cost, and eco-friendly hydrothermal approach. The effect of the sol-gel deposited ZnO seed layer on the vertical alignment ZnO NRs has been thoroughly studied. Characterizations of the seed layer and the as-obtained nanorods were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HR-TEM), and water contact angles (WCA) measurement. SEM analysis shows that these nanorods were grown with a high uniformity and density over the entire substrate. TEM and XRD studies confirmed the hexagonal wurtzite structure of ZnO nanorods. Finally, field immersion tests using the optimized samples were conducted in a coastal sea environment to study biofouling settlement. To the best of our knowledge, there are few articles that investigate the influence of the seed layer deposited on stainless steel on the formation of vertically aligned nanorods for antifouling applications. The novelty of this work is manifested by optimizing the ZnO seed layer to obtain either thick or fine ZnO nanorods (NRs). Moreover, another novelty of this study is the use of the hydrothermal deposition of ZnO NRs on stainless steel for biofouling to replace paints in marine applications.


  • Synthesis of lead-free (Bi0,5Na0,5)TiO3 thin film by RF magnetron sputtering: Impact of Na on the properties of film

    by Ahmad Hamieh, Freddy Ponchel, Sophie Barrau, Denis Remiens

    This work concerns the growth of (Bi0,5Na0,5)TiO3 on Si/SiO2/LNO by RF magnetron sputtering. We observed, for the first time on BNT thin films, reactions that destroy the film. This behavior is associated to sodium or sodium oxide segregation. After an extensive description of the sodium impact onto the film, a solution with adapted deposition conditions to suppress these effects is reported. Raising the sputter deposition temperature to 250 °C allows to have a pure perovskite BNT single phase. The ferroelectric, dielectric and piezoelectric properties of BNT films (thickness = 350 nm) were assessed. In particular, the macroscopic piezoelectric coefficient d33 attains a maximum value of 56 pm/V.


  • Open Access

    3D FEM Analysis of High-Frequency AlN-Based PMUT Arrays on Cavity SOI

    by Wenjuan Liu, Leming He, Xubo Wang, Jia Zhou, Weijiang Xu, Nikolay Smagin, Malika Toubal, Hao Yu, Yuandong Gu, Jinghui Xu, et al.

    This paper presents three-dimensional (3D) models of high-frequency piezoelectric micromachined ultrasonic transducers (PMUTs) based on the finite element method (FEM). These models are verified with fabricated aluminum nitride (AlN)-based PMUT arrays. The 3D numerical model consists of a sandwiched piezoelectric structure, a silicon passive layer, and a silicon substrate with a cavity. Two types of parameters are simulated with periodic boundary conditions: (1) the resonant frequencies and mode shapes of PMUT, and (2) the electrical impedance and acoustic field of PMUT loaded with air and water. The resonant frequencies and mode shapes of an electrically connected PMUT array are obtained with a laser Doppler vibrometer (LDV). The first resonant frequency difference between 3D FEM simulation and the measurement for a 16-MHz PMUT is reasonably within 6%, which is just one-third of that between the analytical method and the measurement. The electrical impedance of the PMUT array measured in air and water is consistent with the simulation results. The 3D model is suitable for predicting electrical and acoustic performance and, thus, optimizing the structure of high-frequency PMUTs. It also has good potential to analyze the transmission and reception performances of a PMUT array for future compact ultrasonic systems.


  • Electric field tuning of magnetization in an antiferroelectric‐based heterostructure: Example of NMG/PLZST/NMG

    by Liuyang Han, Freddy Ponchel, Nicolas Tiercelin, Denis Rémiens, Tuami Lasri, Philippe Pernod, Genshui Wang

    A magnetoelectric (ME) heterostructure was fabricated by depositing a Ni‐Mn‐Ga (NMG) magnetic film on an antiferroelectric (AFE) PLZST—(Pb, La)(Zr, Sn, Ti)O 3 —ceramic substrate. Significant and reversible electric field‐induced relative magnetization changes ( ∆M/M 0 ) were firstly observed in this magnetic/AFE heterostructure, and the ∆ M/M 0 vs electric field loops have been found to correspond well with the strain‐electric field curve of PLZST ceramic. The maximum ∆ M/M 0 variation can reach 15%, indicating an obvious strain‐mediated converse magnetoelectric (CME) effect. A maximum CME coefficient of 1.14 × 10 ‐9  s/m was obtained at the switching electric fields of PLZST. The collected results suggest that AFE materials with a large electric‐field‐induced phase transition strain could be alternative candidates in ME coupling heterostructures.


  • Influence of the magnetic state on the voltage-controlled magnetoelectric effect in a multiferroic artificial heterostructure YIG/PMN-PZT

    by Jianyun Lian, Freddy Ponchel, Nicolas Tiercelin, Liuyang Han, Ying Chen, Denis Rémiens, Tuami Lasri, Genshui Wang, Philippe Pernod, Wenbin Zhang, et al.

    The artificial multiferroic heterostructure used in this work is composed by an yttrium iron garnet (YIG) film deposited by radio frequency (rf) magnetron sputtering on a metalized PMN-PZT ceramic. We demonstrate, thanks to the well-known converse magnetoelectric (CME) coupling, the control of the magnetic state of the YIG film by means of a low electric field applied to the PMN-PZT ceramic. In particular, it is shown that the variations of the magnetization induced by the strain are functions of the magnetic sate of the film. It is shown that the maximum amplitude variation is observed at the coercive magnetic field (Hc), whereas when H increases, the strain effect has a limited impact on the film magnetization. A second effect has also been remarked on the magnetization of the YIG film but only after the first strain induced cycle has been applied. These variations, observed only under low applied magnetic fields, can be attributed to the re-orientation of some magnetic moments which are easy to switch under low magnetic fields. We find that after poling the YIG film, i.e., applying a magnetic field on it, the initial state is restored. The CME coupling coefficient is determined for different magnetic states of the YIG film, and the maximum value 11 × 10−8 s/m is obtained at H = Hc and E = Ec (the coercive field of the PMN-PZT ceramic). The relative susceptibility tunability available for the heterostructure proposed is 16.8% for an electric field applied between 0 and −4 kV/cm.


  • Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

    by Jianyun Lian, Freddy Ponchel, Nicolas Tiercelin, Ying Chen, Denis Rémiens, Tuami Lasri, Genshui Wang, Philippe Pernod, Wenbin Zhang, Xianlin Dong

    In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10−7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.


  • Ferroelectric Phase Transition, Interfaces Quality, and Stress Evolution of TiOx/BaxSr1−xTiO3 Structures

    by Areski Ghalem, Freddy Ponchel, Denis Rémiens, Tuami Lasri

    Ba(Sr,Ti)O3 material presents a remarkable property that lies in the possibility to change the permittivity by applying a dc electric field, i.e., BST is a tunable material. That makes BST a very interesting material for the development of reconfigurable devices in microelectronics. In this study, we focus our work on Ba(Sr,Ti)O3 with Ba/Sr = 30/70, the films are deposited by radio‐frequency magnetron sputtering on Al2O3 (0001). A buffer layer of TiOx is used to control the film orientation. The influence of this buffer layer on the dielectric properties, the interfaces quality with respect to the film thickness, and the temperature is analyzed. An increase of 30% of the relative permittivity was measured and a tunability of 50% was attained at 300 KV/cm. The dielectric measurements on BST/TiOx as a function of the temperature show a shift of the Curie temperature (Tc = −40°C) in comparison to BST without TiOx layer (Tc = −80°C). We demonstrate that the Curie temperature does not correspond to the maximum permittivity. The important stress measured on the films (930 MPa) could explain this behavior.