Titanium silicidation by halogen lamp annealing
Authors:
- 15 June 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5251-5255
Abstract
Silicidation of titanium (Ti) thin films sputter‐deposited onto silicon (Si) was performed by the halogen lamp annealing method. This method was found to be quite effective in forming oxide‐free and homogeneous titanium disilicide (TiSi2). Temperature dependence of silicidation was investigated by using Rutherford backscattering spectroscopy, x‐ray diffraction, and sheet resistance measurements. It was found that the dominant crystal phase of silicide formed during annealing at 600 and 625 °C for 90 sec was titanium monosilicide (TiSi), and that a homogeneous TiSi2 with resistivity of ∼15 μΩ cm was formed at 700 °C. Self‐aligned TiSi2 with low resistivity can be obtained with two‐step annealing: the first‐step annealing was carried out below 600 °C and followed by removal of unreacted Ti on silicon dioxide (SiO2), and the second‐step annealing was carried out above 650 °C.Keywords
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